Laser-induced metal deposition on semiconductors from liquid electrolytes

Nánai, L.; Hevesi, I.; Bunkin, F. V.; Luk’yanchuk, B. S.; Brook, M. R.; Shafeev, G. A.; Jelski, Daniel A.; Wu, Z. C.; George, Thomas F.
February 1989
Applied Physics Letters;2/20/1989, Vol. 54 Issue 8, p736
Academic Journal
Maskless deposition of gold and copper from electrolyte solutions onto n-doped semiconductors (GaAs, Si) is investigated. The metal deposits are found to have lateral dimensions of about 1 μm and are in barrier contact with the semiconductor. The proposed deposition mechanism is governed by the electric fields resulting from the Dember effect, the p-n junction, and the thermal emf.


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