Dopant redistribution during oxidation of SiGe

LeGoues, F. K.; Rosenberg, R.; Meyerson, B. S.
February 1989
Applied Physics Letters;2/20/1989, Vol. 54 Issue 8, p751
Academic Journal
This letter compares diffusion of boron in Si during oxidation both for pure Si and for Si covered with a very thin layer of SiGe alloy. It demonstrates that the thin layer of SiGe suppresses oxidation enhanced diffusion of boron. A mechanism is proposed based on suppression of Si interstitials. This phenomenon is then related to the faster rate of oxidation of bulk SiGe and SiGe-covered Si samples reported previously.


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