High critical currents in epitaxial YBa2Cu3O7-x thin films on silicon with buffer layers

Wu, X. D.; Inam, A.; Hegde, M. S.; Wilkens, B.; Chang, C. C.; Hwang, D. M.; Nazar, L.; Venkatesan, T.; Miura, S.; Matsubara, S.; Miyasaka, Y.; Shohata, N.
February 1989
Applied Physics Letters;2/20/1989, Vol. 54 Issue 8, p754
Academic Journal
As-deposited superconducting thin films (∼0.1 μm) of YBa2Cu3O7-x have been prepared by pulsed laser deposition on (100) Si with buffer layers of BaTiO3/MgAl2O4. X-ray diffraction studies reveal that the films grow epitaxially with the c axis preferentially oriented normal to the substrate surface. This is confirmed by ion channeling measurements along the (100) (normal to the surface) and (110) directions of the Si substrate showing a minimum yield of 54% along the (100), and 78% along the (110) axes using 2.8 MeV He++. Preliminary transmission electron microscopy study also supports these results. The as-deposited films have zero resistance temperatures of 86–87 K, and critical current densities of 6×104 A/cm2 at 77 K and 1.2×105 A/cm2 at 73 K. Our results indicate that the superconducting properties of the films are limited primarily by the quality and degree of epitaxal growth of the buffer layers on the silicon substrate.


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