Ion pairing effects on substitutional impurity diffusion in silicon

Cowern, N. E. B.
February 1989
Applied Physics Letters;2/20/1989, Vol. 54 Issue 8, p703
Academic Journal
Recent experiments have shown that ion pairing has a major influence on the diffusion and precipitation of oppositely charged impurities in silicon. Published data are used to obtain ion pairing coefficients Ω for n-type impurities with B and In. A single value, Ω=0.17/ni, suffices to describe the cases P-B, As-B, and Sb-B. For P-In and Sb-In, Ω is roughly an order of magnitude smaller. These observations are consistent with the picture that paired ions occupy adjacent substitutional sites, with a small perturbation in their Coulomb binding arising from elastic effects.


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