TITLE

Rapid thermal annealing: An efficient means to reveal chromium profiles in Si after diffusion and gettering

AUTHOR(S)
Zhu, J.; Chaussemy, G.; Barbier, D.
PUB. DATE
February 1989
SOURCE
Applied Physics Letters;2/13/1989, Vol. 54 Issue 7, p611
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The combined use of rapid thermal annealing and deep level transient spectroscopy is described as an efficient means to reveal chromium profiles in silicon wafer after various thermal treatments. The proposed method has been successfully applied to observe the depletion of chromium atoms at the near-surface region of intentionally contaminated Czochralski-grown silicon reslting from a conventional three-step gettering cycle.
ACCESSION #
9829977

 

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