In situ x-ray photoelectron spectroscopic study of GaAs grown by atomic layer epitaxy

Kodama, K.; Ozeki, M.; Mochizuki, K.; Ohtsuka, N.
February 1989
Applied Physics Letters;2/13/1989, Vol. 54 Issue 7, p656
Academic Journal
We carried out an in situ investigation of GaAs grown by atomic layer epitaxy, using an x-ray photoelectron spectroscopy system combined with a metalorganic vapor phase epitaxial growth chamber, where Ga(CH3)3 and AsH3 were the source gases. It has been proved that Ga(CH3)n molecules (where n=1 or 2) are decomposed into Ga atoms after being adsorbed on the GaAs surface around 500 °C. This means that the self-limited adsorption of Ga in the atomic layer epitaxy of GaAs can be achieved on the surface where the Ga adsorbate is atomic Ga.


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