TITLE

Selective epitaxial silicon growth in the 650–1100 °C range in a reduced pressure chemical vapor deposition reactor using dichlorosilane

AUTHOR(S)
Regolini, J. L.; Bensahel, D.; Scheid, E.; Mercier, J.
PUB. DATE
February 1989
SOURCE
Applied Physics Letters;2/13/1989, Vol. 54 Issue 7, p658
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Selective epitaxial silicon layers have been grown in a reduced pressure (<2 Torr) reactor in the 650–1100 °C temperature range using only dichlorosilane (DCS) gas diluted in hydrogen. The growth rate plotted in Arrhenius coordinates (log G vs 1/T) shows an activation energy of 59 kcal/mol in the 650–800 °C range. A comparison is made between the DCS system and our previous results concerning the SiH4/HCl/H2 system.
ACCESSION #
9829943

 

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