Tertiary butylarsine grown GaAs solar cell

Sundaram, V. S.; Arau, B. A.; Avery, J. E.; Bailey, A. L.; Girard, G. R.; Hager, H. E.; Thompson, A. G.; Fraas, L. M.
February 1989
Applied Physics Letters;2/13/1989, Vol. 54 Issue 7, p671
Academic Journal
High quality, intentionally doped (both p and n type) gallium arsenide layers have been grown using trimethylgallium and tertiary butylarsine in a low-pressure metalorganic chemical vapor deposition reactor. Using an alternate arsenic source, namely, tertiary butylarsine, a concentrator GaAs solar cell has been fabricated. Under 37 sun, air mass 1.5 illumination, the cell had an open-circuit voltage of 1.095 V, a fill factor of 83%, and an overall efficiency of 18.5%.


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