TITLE

Tertiary butylarsine grown GaAs solar cell

AUTHOR(S)
Sundaram, V. S.; Arau, B. A.; Avery, J. E.; Bailey, A. L.; Girard, G. R.; Hager, H. E.; Thompson, A. G.; Fraas, L. M.
PUB. DATE
February 1989
SOURCE
Applied Physics Letters;2/13/1989, Vol. 54 Issue 7, p671
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
High quality, intentionally doped (both p and n type) gallium arsenide layers have been grown using trimethylgallium and tertiary butylarsine in a low-pressure metalorganic chemical vapor deposition reactor. Using an alternate arsenic source, namely, tertiary butylarsine, a concentrator GaAs solar cell has been fabricated. Under 37 sun, air mass 1.5 illumination, the cell had an open-circuit voltage of 1.095 V, a fill factor of 83%, and an overall efficiency of 18.5%.
ACCESSION #
9829932

 

Related Articles

  • Effects of Na2S and (NH4)2S edge passivation treatments on the dark current-voltage characteristics of GaAs pn diodes. Carpenter, M. S.; Melloch, M. R.; Lundstrom, M. S.; Tobin, S. P. // Applied Physics Letters;6/20/1988, Vol. 52 Issue 25, p2157 

    We have investigated the dark current-voltage characteristics of GaAs pn homojunctions whose surfaces have been passivated with Na2S and (NH4)2S chemical treatments. Reductions in 2kT perimeter recombination currents by a factor of 3.2 were obtained for the two treatments. A shunt leakage,...

  • Graded-index separate-confinement InGaAs/GaAs strained-layer quantum well laser grown by metalorganic chemical vapor deposition. Feketa, D.; Chan, K. T.; Ballantyne, J. M.; Eastman, L. F. // Applied Physics Letters;12/15/1986, Vol. 49 Issue 24, p1659 

    A graded-index separate-confinement strained-layer quantum well laser with pseudomorphic Ga0.63In0.37As quantum well was grown by metalorganic chemical vapor deposition. The lasing wavelength is 0.99 μm at 300 K and the average threshold current density of broad area 146×363 μm devices...

  • (AlAs)0.5(GaAs)0.5 fractional-layer superlattices grown on (001) vicinal surfaces by metalorganic chemical vapor deposition. Fukui, Takashi; Saito, Hisao // Applied Physics Letters;3/30/1987, Vol. 50 Issue 13, p824 

    (AlAs)0.5(GaAs)0.5 fractional-layer superlattices with a new periodicity perpendicular to the growth direction was successfully grown by metalorganic chemical vapor deposition on (001) GaAs substrates slightly misoriented toward [110]. The atomic structures were analyzed by x-ray superlattice...

  • Arsenic dimers and multilayers on (001)GaAs surfaces in atmospheric pressure organometallic.... Kamiya, Itaru; Tanaka, H. // Applied Physics Letters;3/9/1992, Vol. 60 Issue 10, p1238 

    Examines the existence of arsenic dimers and multilayers on (001)gallium arsenide (GaAs) surface under organometallic chemical vapor deposition (OMCVD). Achievement of reflectance-difference spectra from the surfaces; Attainment of (2X4)- and c(4X4)-like surface terminations on (001)GaAs;...

  • Low loss InGaAs/InP multiple quantum well waveguides. Koren, U.; Miller, B. I.; Koch, T. L.; Boyd, G. D.; Capik, R. J.; Soccolich, C. E. // Applied Physics Letters;12/8/1986, Vol. 49 Issue 23, p1602 

    Double heterostructure planar waveguides with an InGaAs/InP multiple quantum well (MQW) core and InP cladding layers were grown by atmospheric pressure metalorganic chemical vapor deposition. Ridge waveguides had a low propagation loss of 0.8 dB/cm for 1.52 μm input light. The indices of...

  • 14.5% conversion efficiency GaAs solar cell fabricated on Si substrates. Itoh, Yoshio; Nishioka, Takashi; Yamamoto, Akio; Yamaguchi, Masafumi // Applied Physics Letters;12/8/1986, Vol. 49 Issue 23, p1614 

    AlGaAs-GaAs heteroface p+-p-n solar cells have been fabricated directly on Si substrates using metalorganic chemical vapor deposition. GaAs on Si solar cell efficiency as high as exceeding 14.5% at AM1.5 was obtained by cleaning the substrate surface and repeating GaAs film growth interruption....

  • Buffer layer effects on residual stress in InP on Si substrates. Sugo, Mitsuru; Yamaguchi, Masafumi // Applied Physics Letters;5/1/1989, Vol. 54 Issue 18, p1754 

    Heteroepitaxial growth of InP on Si(100) substrates using InP direct growth, and with a GaAs or GaP buffer layer has been grown by organometallic vapor phase epitaxy (OMVPE). The effects of buffer layers on residual stress in InP films are examined. For InP/(GaP buffer layer)/Si, stress...

  • Current–voltage characteristics through GaAs/AlGaAs/GaAs heterobarriers grown by metalorganic chemical vapor deposition. Hase, I.; Kawai, H.; Kaneko, K.; Watanabe, N. // Journal of Applied Physics;6/1/1986, Vol. 59 Issue 11, p3792 

    Examines the current-voltage characteristics of gallium arsenide/aluminum[subx] gallium[sub1-x] arsenic/gallium heterobarriers grown by metalorganic chemical vapor deposition. Calculation of the current; Description of the tunneling effective mass; Mechanism which plays an important role in...

  • A kinetic model for metalorganic chemical vapor deposition from trimethylgallium and arsine. Tao, Meng // Journal of Applied Physics;4/1/2000, Vol. 87 Issue 7, p3554 

    Presents information on a study which proposed a kinetic model based on the collision theory of chemical reactions for gallium arsenide (GaAs) metalorganic chemical vapor deposition from trimethylgallium and arsine. Reaction mechanism; Kinetics in GaAs; Conclusions.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics