Reduction of transient-enhanced diffusion of boron in silicon by implantation through oxide

Fan, D.; Jaccodine, R. J.
February 1989
Applied Physics Letters;2/13/1989, Vol. 54 Issue 7, p603
Academic Journal
Transient-enhanced diffusion of boron is studied by comparing through-oxide and direct boron implants. Some of the directly implanted wafers are differentially anodized and etched to depths equal to the thicknesses of the thermal oxides. Spreading resistance profiles after annealing reveal that transient-enhanced diffusion of boron can be prevented by implantation through oxide. The result indicates that the presence of recoiled oxygen in the through-oxide implanted silicon can be important in reducing dopant-enhanced diffusion.


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