TITLE

Threshold voltage shift of amorphous silicon thin-film transistors by step doping

AUTHOR(S)
Matsumoto, T.; Mishima, Y.; Yanai, K.; Oki, K.
PUB. DATE
February 1989
SOURCE
Applied Physics Letters;2/13/1989, Vol. 54 Issue 7, p606
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The threshold voltage (VT) shift of hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) by boron doping has been investigated. In TFTs with a uniformly doped structure (SiN/B-doped a-Si:H), VT shifts to a positive voltage by boron doping, while the field-effect mobility decreases markedly. By using a step-doped structure (SiN/undoped a-Si:H/B-doped a-Si:H), the degradation of the field-effect mobility by boron doping becomes less than that of a uniformly doped TFT with the same VT shift, and a VT shift of 3.5 V was obtained without degradation of the field-effect mobility.
ACCESSION #
9829923

 

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