Hydrogen and oxygen content of silicon nitride films prepared by multipolar plasma-enhanced chemical vapor deposition

Boher, Pierre; Renaud, Monique; van IJzendoorn, L. J.; Hily, Yves
February 1989
Applied Physics Letters;2/6/1989, Vol. 54 Issue 6, p511
Academic Journal
Very low H content SiN films have been deposited by a multipolar plasma-enhanced deposition system at room temperature. The main plasma parameters which control the hydrogen and oxygen incorporation in the films have also been analyzed and optimized.


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