TITLE

Hydrogen and oxygen content of silicon nitride films prepared by multipolar plasma-enhanced chemical vapor deposition

AUTHOR(S)
Boher, Pierre; Renaud, Monique; van IJzendoorn, L. J.; Hily, Yves
PUB. DATE
February 1989
SOURCE
Applied Physics Letters;2/6/1989, Vol. 54 Issue 6, p511
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Very low H content SiN films have been deposited by a multipolar plasma-enhanced deposition system at room temperature. The main plasma parameters which control the hydrogen and oxygen incorporation in the films have also been analyzed and optimized.
ACCESSION #
9829886

 

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