Intermixing of InGaAs/InP multiple quantum well structures by Ga implantation

Sumida, Hitoshi; Asahi, Hajime; Yu, S. Jae; Asami, Kumiko; Gonda, Shun-ichi; Tanoue, Hisao
February 1989
Applied Physics Letters;2/6/1989, Vol. 54 Issue 6, p520
Academic Journal
The effect of Ga implantation and thermal annealing on InGaAs/InP multiple quantum well structures is investigated by photoluminescence (PL) and sputtering Auger electron spectroscopy. It is found that the interdiffusion of both column III and column V atoms occurs at the interfaces between InP barrier and InGaAs well layers, but the degree of intermixing near the sample surface is small. The variations of PL peak energy shift with annealing and dose suggest that the PL peak shift is attributed to a combination of intermixing and stress.


Related Articles

  • In-plane photovoltage and photoluminescence studies in sequentially grown GaInNAs and GaInAs quantum wells. Mazzucato, S.; Balkan, N.; Teke, A.; Erol, A.; Potter, R. J.; Arikan, M. C.; Marie, X.; Fontaine, C.; Carrère, H.; Bedel, E.; Lacoste, G. // Journal of Applied Physics;3/1/2003, Vol. 93 Issue 5, p2440 

    We have investigated in-plane photovoltage (IPV) and photoluminescence (PL) in sequentially grown Ga[sub 0.8]In[sub 0.2]As/GaAs and Ga[sub 0.8]In[sub 0.2]N[sub 0.015]As[sub 0.985]/GaAs quantum wells. Temperature, excitation intensity, spectral and time dependent study of the IPV, arising from...

  • Cyclotron mass of two-dimentional holes in strained-layer GaAS/In[sub 0.20]Ga[sub 0.80]As/GaAs.... Shawn-Yu Lin; Wei, H.P. // Applied Physics Letters;10/9/1995, Vol. 67 Issue 15, p2170 

    Examines the cyclotron mass of two-dimentional holes in a series of p-type Gallium compounds quantum well structures. Density dependence of the measured effective mass and the cyclotron resonance; Process of expressing the Fermi energy in terms of the carrier density; Characterization of the...

  • Influence of low energy Ar-sputtering on the electronic properties of InAs-based quantum well.... Magnee, P.H.C.; den Hartog, S.G. // Applied Physics Letters;12/11/1995, Vol. 67 Issue 24, p3569 

    Investigates the influence of low energy Argon-ion milling cleaning techniques on indium arsenide-based quantum well structures. Effect of etching on electron density and mobility; Impact of anneal at 180 degree Celsius; Use of etching with a Kaufmann source and sputter-etching.

  • Peculiarities of catastrophic optical damage in single quantum well InGaAsP/InGaP buried-heterostructure lasers. Yoo, Jae S.; Lee, Sang H.; Park, Gueorgui T.; Ko, Yong T.; Kim, Taeil // Journal of Applied Physics;2/1/1994, Vol. 75 Issue 3, p1840 

    Presents a study which investigated the catastrophic optical damage in single quantum well indium gallium arsenic phosphide/indium gallium phosphide buried-heterostructure lasers. Sample preparation; Information on the causes of laser diode failures; Conclusions.

  • Dynamics of polarized photoluminescence in m-plane InGaN/GaN quantum wells. Liuolia, Vytautas; Marcinkevičius, Saulius; Lin, You-Da; Ohta, Hiroaki; DenBaars, Steven P.; Nakamura, Shuji // Journal of Applied Physics;Aug2010, Vol. 108 Issue 2, p023101 

    Spectrally-, polarization-, and time-resolved photoluminescence (PL) experiments have been performed on 2.5 nm thick m-plane single InGaN quantum wells. It has been found that PL decay is mainly determined by nonradiative recombination through several types of recombination centers, while PL...

  • Atomic-layer epitaxy of GaN quantum wells and quantum dots on (0001) AlN. Adelmann, C.; Brault, J.; Rouvie`re, J.-L.; Mariette, H.; Mula, Guido; Daudin, B. // Journal of Applied Physics;4/15/2002, Vol. 91 Issue 8, p5498 

    We show that a dynamically stable Ga film is formed on (0001) AlN in a large range of Ga fluxes at a substrate temperature of 740 °C. This feature allows for atomic layer epitaxy (ALE) of GaN on AlN by alternate exposure to Ga and N flux. We show that, at a growth temperature of 740 °C,...

  • Up to 3 μm light emission on InP substrate using GaInAs/GaAsSb type-II quantum wells. Sprengel, Stephan; Grasse, Christian; Vizbaras, Kristijonas; Gruendl, Tobias; Amann, Markus-Christian // Applied Physics Letters;11/28/2011, Vol. 99 Issue 22, p221109 

    We present 3 μm photoluminescence at room temperature, which is achieved with GaInAs/GaAsSb type-II quantum wells on InP substrate. This long-wavelength emission became feasible by using highly compressive strained Ga0.25In0.75As and GaAs0.4Sb0.6 layers. Furthermore, a comparison between...

  • Doublet state of resonantly coupled AlGaAs/GaAs quantum wells grown by metalorganic chemical vapor deposition. Kawai, H.; Kaneko, J.; Watanabe, N. // Journal of Applied Physics;8/1/1985, Vol. 58 Issue 3, p1263 

    Focuses on a study that illustrated the dependence of doublet energies on interwell spacing in double quantum wells by observing the photoluminescence spectra of the systems at various temperatures. Transmission electron micrograph lattice image of aluminum-arsenic/gallium-arsenic...

  • Dispersion relation, electron and hole effective masses in InxGa1-xAs single quantum wells. Oettinger, K.; Wimbauer, Th.; Drechsler, M.; Meyer, B. K.; Hardtdegen, H.; Lüth, H. // Journal of Applied Physics;2/1/1996, Vol. 79 Issue 3, p1481 

    Deals with a study which determined the optical and electrical properties of modulation doped In[subx]Ga[sub1-x]/InP single quantum wells. Experimental details; Experimental results; Analysis and discussion.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics