TITLE

Medium-energy sputtering of thin films: The approach to percolation

AUTHOR(S)
Papandreou, N.; Nedellec, P.; Rosenblatt, J.
PUB. DATE
February 1989
SOURCE
Applied Physics Letters;2/6/1989, Vol. 54 Issue 6, p537
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Thin Pd films are irradiated with 100 keV Xe ions and their resistance measured in situ. The evolution of resistance as a function of the fluence is found to display invariance properties, which lead to a characterization of the film structure and morphology. The calculations emphasize the role of two features of medium-energy sputtering: the thickness dependence of the sputtering yield and the applicability of Poisson statistics to the process of hole creation in the film.
ACCESSION #
9829869

 

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