Electron tunneling time measured by photoluminescence excitation correlation spectroscopy

Jackson, M. K.; Johnson, M. B.; Chow, D. H.; McGill, T. C.; Nieh, C. W.
February 1989
Applied Physics Letters;2/6/1989, Vol. 54 Issue 6, p552
Academic Journal
The tunneling time for electrons to escape from the lowest quasibound state in the quantum wells of GaAs/AlAs/GaAs/AlAs/GaAs double-barrier heterostructures with barriers between 16 and 62 Å has been measured at 80 K using photoluminescence excitation correlation spectroscopy. The decay time for samples with barrier thicknesses from 16 Å (≊12 ps) to 34 Å(≊800 ps) depends exponentially on barrier thickness, in good agreement with calculations of electron tunneling time derived from the energy width of the resonance. Electron and heavy hole carrier densities are observed to decay at the same rate, indicating a coupling between the two decay processes.


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