Ion-implanted Zn diffusion and impurity-induced disordering of an AlGaAs superlattice

Zucker, E. P.; Hashimoto, A.; Fukunaga, T.; Watanabe, N.
February 1989
Applied Physics Letters;2/6/1989, Vol. 54 Issue 6, p564
Academic Journal
The diffusion coefficient of ion-implanted Zn and the Al-Ga interdiffusion coefficient in an Al0.5Ga0.5As/GaAs superlattice (SL) are extracted from secondary-ion mass spectroscopy profiles for four diffusion times at 750 °C. The zinc diffusion coefficient goes as the square of the zinc concentration, implying local thermal equilibrium, and is over 200 times smaller than reported values for gaseous-source Zn diffusions at 650 °C in GaAs. The SL disordering rate increases with increasing zinc concentration and is attributed to the diffusion of positively charged column III interstitials (Ga+mI or Al+mI) with m between 2 and 3.


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