TITLE

Optical investigation of atomic steps in ultrathin InGaAs/InP quantum wells grown by vapor levitation epitaxy

AUTHOR(S)
Morais, P. C.; Cox, H. M.; Bastos, P. L.; Hwang, D. M.; Worlock, J. M.; Yablonovitch, E.; Nahory, R. E.
PUB. DATE
January 1989
SOURCE
Applied Physics Letters;1/30/1989, Vol. 54 Issue 5, p442
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Ultrathin InGaAs/InP single quantum well structures, grown by chloride transport vapor levitation epitaxy, have been investigated by low-temperature photoluminescence (PL). Well-resolved multiple peaks are observed in the PL spectra, instead of an expected single peak. We attribute this to monolayer (a0/2=2.93 Å) variations in quantum well (QW) thickness. Separate peak positions for QW thicknesses corresponding to 2–6 monolayers have been determined, providing an unambiguous thickness calibration for spectral shifts due to quantum confinement. The PL peak corresponding to two monolayers occurs at 1.314 eV, corresponding to an energy shift of 524 meV. Experimental data agree very well with a simple effective mass theory.
ACCESSION #
9829783

 

Related Articles

  • Luminescence of Ga1-xAlxAs/GaAs single quantum wells grown by liquid phase epitaxy. Kelting, K.; Koehler, K.; Zwicknagl, P. // Applied Physics Letters;1/13/1986, Vol. 48 Issue 2, p157 

    Low-temperature liquid phase epitaxy is used to grow Ga0.6Al0.4As/GaAs/Ga0.6Al0.4As single quantum wells. Photoluminescence (T=2 K) reveals well thicknesses from 7 to 2.4 nm. Micrographs show that the spatial origin of highly intense luminescence (T=300 K) is in the GaAs layer.

  • Comparison study of photoluminescence from InGaN/GaN multiple quantum wells and InGaN epitaxial layers under large hydrostatic pressure. Shan, W.; Perlin, P.; Ager, J. W.; Walukiewicz, W.; Haller, E. E.; McCluskey, M. D.; Johnson, N. M.; Bour, D. P. // Applied Physics Letters;9/21/1998, Vol. 73 Issue 12 

    We report the results of a comparison study of photoluminescence (PL) from an In[sub 0.15]Ga[sub 0.85]N/GaN multiple-quantum-well (MQW) sample and an In[sub 0.11]Ga[sub 0.89]N thick epitaxial-layer sample, which have very similar band-gap energies. Large hydrostatic pressures were used for our...

  • Quantum wells due to ordering in GaInP. Hsu, Y.; Stringfellow, G. B.; Inglefield, C. E.; DeLong, M. C.; Taylor, P. C.; Cho, J. H.; Seong, T.-Y. // Applied Physics Letters;12/28/1998, Vol. 73 Issue 26, p3905 

    CuPt ordering results in a reduction of the band-gap energy of GaInP. Thus, heterostructures and quantum wells can be produced by simply varying the order parameter, without changing the solid composition. Changes in the order parameter can be induced by changes in growth conditions. The...

  • GaInAs/InP quantum wells grown by organometallic vapor phase epitaxy. Kuo, C. P.; Fry, K. L.; Stringfellow, G. B. // Applied Physics Letters;10/15/1985, Vol. 47 Issue 8, p855 

    Single quantum well InP/Ga0.47In0.53As/InP structures have been fabricated using atmospheric pressure organometallic vapor phase epitaxy. The reactants were trimethylgallium, trimethylindium, arsine, and phosphine. The structures were characterized mainly using low-temperature (4 K)...

  • Optical investigation in ultrathin InAs/InP quantum wells grown by hydride vapor-phase epitaxy. Banvillet, H.; Gil, E.; Cadoret, R.; Disseix, P.; Ferdjani, K.; Vasson, A.; Vasson, A. M.; Tabata, A.; Benyattou, T.; Guillot, G. // Journal of Applied Physics;8/1/1991, Vol. 70 Issue 3, p1638 

    Presents a study which investigated the optical properties of ultrathin InAs/InP quantum wells grown by hydride vapor-phase epitaxy. Information on the epitaxial growth; Details of the photoluminescence investigation; Conclusion.

  • Exciton resonances in ultrathin In As/InP quantum wells. Paki, P.; Leonelli, R. // Applied Physics Letters;3/8/1999, Vol. 74 Issue 10, p1445 

    Presents detailed optical measurements of ultrathin InAs/InP quantum wells grown by metal organic vapor phase epitaxy. Excitonic resonances revealed by photoluminescence excitation spectra; Presence of well-defined regions of different InAs layer thickness.

  • Temperature quenching of exciton luminescence intensity in ZnO/(Mg,Zn)O multiple quantum wells. Makino, T.; Tamura, K.; Chia, C. H.; Segawa, Y.; Kawasaki, M.; Ohtomo, A.; Koinuma, H. // Journal of Applied Physics;5/15/2003, Vol. 93 Issue 10, p5929 

    The temperature-dependent behavior of excitonic photoluminescence observed in ZnO/MgZnO multiple quantum wells (MQWs) in the temperature range of 5-300 K is described. In a ZnO/Mg[SUB0.27]Zn[SUB0.73]O MQW grown by laser molecular-beam epitaxy, the luminescence was dominated by localized exciton...

  • Photoluminescence characteristics of AlGaAs-GaAs single quantum wells grown by migration-enhanced epitaxy at 300 °C substrate temperature. Horikoshi, Yoshiji; Kawashima, Minoru; Yamaguchi, Hiroshi // Applied Physics Letters;6/8/1987, Vol. 50 Issue 23, p1686 

    When Ga or Al atoms are evaporated on a clean GaAs surface in an As-free or a very low As pressure atmosphere, they are quite mobile and migrate very rapidly along the surface even at low temperatures. This characteristic is exploited for growing high-quality GaAs and AlGaAs layers at very low...

  • Photoluminescence study of Si1-yCy/Si quantum well structures grown by molecular beam epitaxy. Brunner, K.; Eberl, K.; Winter, W.; Jin-Phillipp, N. Y. // Applied Physics Letters;7/1/1996, Vol. 69 Issue 1, p91 

    Low-temperature photoluminescence (PL) spectroscopy is applied to investigate pseudomorphic Si1-yCy/Si quantum well structures grown by solid-source molecular beam epitaxy on Si substrates. The influence of substrate temperature during growth, growth rate, C content, and layer width on PL...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics