Sequential nature of damage annealing and activation in implanted GaAs

Tandon, J. L.; Madok, J. H.; Leybovich, I. S.; Bai, G.; Nicolet, M-A.
January 1989
Applied Physics Letters;1/30/1989, Vol. 54 Issue 5, p448
Academic Journal
Rapid thermal processing of implanted GaAs reveals a definitive sequence in the damage annealing and the electrical activation of ions. Removal of implantation-induced damage and restoration of GaAs crystallinity occurs first. Irrespective of implanted species, at this stage the GaAs is n-type and highly resistive with almost ideal values of electron mobility. Electrical activation is achieved next when, in a narrow anneal temperature window, the material becomes n- or p-type, or remains semi-insulating, commensurate to the chemical nature of the implanted ion. Such a two-step sequence in the electrical doping of GaAs by ion implantation may be unique of GaAs and other compound semiconductors.


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