TITLE

Transport properties of two-dimensional electron gas systems in delta-doped Si:In0.53Ga0.47As grown by organometallic chemical vapor deposition

AUTHOR(S)
Hong, W-P.; DeRosa, F.; Bhat, R.; Allen, S. J.; Hayes, J. R.
PUB. DATE
January 1989
SOURCE
Applied Physics Letters;1/30/1989, Vol. 54 Issue 5, p457
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have investigated the transport properties of a two-dimensional electron gas formed in delta-doped In0.53 Ga0.47 As grown by metalorganic chemical vapor deposition technique. Very high free-electron concentrations of 1.4×1013 and 9.6×1012 cm-2 have been obtained at 300 and 77 K, respectively. Hall mobilities of 9300 and 14 600 cm2 /V s were measured with carrier concentrations of 3.7×1012 and 3.0×1012 cm-2 at 300 and 77 K, respectively. This is a factor of 3 higher than is expected for homogeneously doped materials having a similar doping. Schubnikov–de Haas oscillations confirmed the two-dimensional nature of the electronic structure in these delta-doped materials, and electron effective masses were determined from cyclotron resonance measurements.
ACCESSION #
9829775

 

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