Negative transconductance and negative differential resistance in a grid-gate modulation-doped field-effect transistor

Ismail, K.; Chu, W.; Yen, A.; Antoniadis, D. A.; Smith, Henry I.
January 1989
Applied Physics Letters;1/30/1989, Vol. 54 Issue 5, p460
Academic Journal
We report on transport measurements in grid-gate lateral-surface-superlattice (LSSL) field-effect transistors on a modulation-doped GaAs/AlGaAs heterostructure. The LSSL is created by a 0.2 μm period Ti/Au grid on top of the AlGaAs layer, which presents a tunable, two-dimensional periodic potential modulation to the electrons traveling from source to drain. Current measurements at 4.2 K as a function of gate bias exhibit negative transconductance at a fixed drain bias below 15 mV, providing evidence of a superlattice effect (i.e., coherent back-diffraction). In addition, negative differential resistance is observed at a fixed gate bias and a drain bias around 100 mV, which could be a manifestation of sequential resonant tunneling.


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