Light-induced changes of gap-state profile in phosphorus-doped hydrogenated amorphous silicon

Okushi, Hideyo; Furui, Tatsuya; Banerjee, Ratnabali; Tanaka, Kazunobu
January 1989
Applied Physics Letters;1/30/1989, Vol. 54 Issue 5, p439
Academic Journal
We have determined the gap-state profiles of phosphorus-doped hydrogenated amorphous silicon before and after light soaking in a broader energy range [0.25–1.50 eV below the conduction-band edge (Ec) ] by using several variations of isothermal capacitance transient spectroscopy. It is found that gap states are created in the range of 0.25–0.35 eV below Ec, which are attributed to 31P-related hyperfine electron-spin-resonance centers.


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