Gain recovery time of traveling-wave semiconductor optical amplifiers

Eisenstein, G.; Tucker, R. S.; Wiesenfeld, J. M.; Hansen, P. B.; Raybon, G.; Johnson, B. C.; Bridges, T. J.; Storz, F. G.; Burrus, C. A.
January 1989
Applied Physics Letters;1/30/1989, Vol. 54 Issue 5, p454
Academic Journal
We propose a mechanism which may shorten the gain recovery time in semiconductor optical amplifiers. The mechanism is carrier diffusion from nearby carrier storage regions (carrier reservoirs), which enhances the carrier recovery process in the active region and consequently reduces the gain recovery time. Bias-independent recovery times as short at 100 ps are demonstrated in a 1.3-μm traveling-wave amplifier.


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