Optically controlled absorption modulator based on state filling of InxGa1-xAs/GaAs quantum wells

Iannelli, J. M.; Maserjian, J.; Hancock, B. R.; Andersson, P. O.; Grunthaner, F. J.
January 1989
Applied Physics Letters;1/23/1989, Vol. 54 Issue 4, p301
Academic Journal
We report the first demonstration of an optically controlled absorption modulator based on state filling in a periodically doped InxGa1-xAs/GaAs multiple quantum well structure. Differential absorption of approximately 104 cm-1 is observed in the quantum wells of our test structure at saturation pump powers. Photoluminescence and time-resolved modulation measurements confirm the predicted behavior of carrier recombination and give a measure of enhanced carrier lifetime of approximately 1 ms. These initial results show the potential for developing these structures into optically addressed spatial light modulators.


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