Unpinned gallium oxide/GaAs interface by hydrogen and nitrogen surface plasma treatment

Callegari, A.; Hoh, P. D.; Buchanan, D. A.; Lacey, D.
January 1989
Applied Physics Letters;1/23/1989, Vol. 54 Issue 4, p332
Academic Journal
The Fermi level at the Ga oxide/GaAs interface has been unpinned by rf plasma cleaning the GaAs surface in H2 and N2. Following plasma cleaning, a Ga oxide film is reactively electron beam deposited onto the substrate. Metal-oxide-semiconductor (MOS) capacitors fabricated on these structures show good high-frequency capacitance-voltage characteristics. This indicates that the density of interface states has been reduced to ∼1011 eV-1 cm-2. The MOS capacitors are found to be stable in air after several months.


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