TITLE

Anisotropic laser etching of oxidized (100) silicon

AUTHOR(S)
Arnone, C.; Scelsi, G. B.
PUB. DATE
January 1989
SOURCE
Applied Physics Letters;1/16/1989, Vol. 54 Issue 3, p225
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Laser-induced anisotropic chemical etching of silicon is reported, by using a 488 nm Ar+ laser in direct write mode and high-pressure Cl2 process gas. Surface modifications directly comparable with conventional anisotropic wet etching methods have been obtained. A main role in the process is played by the masking effect due to a thin uniform SiO2 film grown on the Si substrate. An explanation of the etching mechanism is attempted.
ACCESSION #
9829613

 

Related Articles

  • Millions of cantilevers for atomic force microscopy. Kawakatsu, Hideki; Saya, Daisuke; Kato, Atsushi; Fukushima, Kimitake; Toshiyoshi, Hiroshi; Fujita, Hiroyuki // Review of Scientific Instruments;Mar2002, Vol. 73 Issue 3, p1188 

    Millions of single-crystal silicon cantilevers were fabricated by anisotropic etching of silicon by KOH. They could be tailored to measure from 500 nm to 100 μm in length and from 30 to 100 nm in thickness. Since the tips and the cantilevers were formed by a combination of crystal-line...

  • Silicon fiber formed on silicon without using a gas process. Takami, Tomohide; Kusunoki, Isao // Journal of Applied Physics;6/15/2002, Vol. 91 Issue 12, p10224 

    We demonstrate the formation of self-organized silicon fibers on a Si(111) surface without the use of a gas process. The fibers are formed as follows. (1) Silicon particles are placed on a silicon surface. (2) Monolayer-equivalent gold atoms are deposited on the silicon surface in vacuum. (3)...

  • Development of three-dimensional microstructure processing using macroporous n-type silicon. Ottow, S.; Lehmann, V.; Fo, H. // Applied Physics A: Materials Science & Processing;1996, Vol. 63 Issue 2, p153 

    The development of a micromachining technique for processing arbitrary structures with high aspect ratios in bulk silicon is presented. It is based on utilizing standard microelectronic processes and electrochemical macropore formation on n-type silicon in electrolytes containing hydrofluoric...

  • Study of the effect of boron doping on the aging of micromachined silicon cantilevers. Pember, Andrew; Smith, Jim // Applied Physics Letters;1/30/1995, Vol. 66 Issue 5, p577 

    Examines the micromachined silicon cantilevers using anisotropic etching in conjunction with boron doping. Definition of micromachining; Relationship between resonant frequency and quality factor; Discussion on the mechanism of aging.

  • Bulk and surface contributions to resonant second-harmonic generation from Si(001) surfaces. Qiang An, Yong; Cundiff, Steven T. // Applied Physics Letters;12/30/2002, Vol. 81 Issue 27, p5174 

    The spectra of the isotropic and anisotropic contributions to second-harmonic generation from modified Si(001) surfaces are separated using polarization selection and rotational anisotropy. A bulk anisotropic resonance is observed at a two-photon energy of 3.42 ± 0.01 eV. The isotropic...

  • Soft/hard exchange-coupled layered structures with modulated exchange coupling. Shi-Shen Yan; Elkawni, M.; Li, D. S.; Garmestani, H.; Liu, J. P.; Weston, J. L.; Zangari, G. // Journal of Applied Physics;10/1/2003, Vol. 94 Issue 7, p4535 

    Magnetically soft/hard exchange-coupled Ni[sub 80]Fe[sub 20]/Si[sub 3]N[sub 4]/Sm[sub 40]Fe[sub 60] and Ni[sub 80]Fe[sub 20]/mixture/Sm[sub 40]Fe[sub 60] layered structures with induced in-plane uniaxial anisotropy were deposited by sputtering on Si (100) substrates. The interfacial exchange...

  • Photo-assisted anisotropic etching of phosphorus-doped polycrystalline silicon employing reactive species generated by a microwave discharge. Hayasaka, N.; Okano, H.; Sekine, M.; Horiike, Y. // Applied Physics Letters;4/28/1986, Vol. 48 Issue 17, p1165 

    An anisotropic etching of heavily phosphorus-doped polycrystalline silicon is achieved by protecting the etched sidewall with polymerized film which results from the reaction of chlorine species and methyl methacrylate. Chlorine species are generated by a microwave discharge in Cl2 in the...

  • On the Physical Nature of a Photomechanical Effect. Gerasimov, A. B.; Chiradze, G. D.; Kutivadze, N. G. // Semiconductors;Jan2001, Vol. 35 Issue 1, p72 

    A photomechanical effect was studied in single-crystal Si by a unified method. The dependences of the photomechanical effect on the spectrum and intensity of light, the residual photomechanical effect (the persistence of crystal softening for some time after the termination of indention), the...

  • Model of sagittally bent silicon crystals diffracting in the Laue mode: Effects of elastic anisotropy on the rocking-curve widths (abstract). Zhong, Z.; Siddons, D. P.; Chapman, D.; Kao, C. C.; Zhong, N.; Hastings, J. B. // Review of Scientific Instruments;Mar2002, Vol. 73 Issue 3, p1615 

    Sagittal focusing of synchrotron x rays with asymmetric Laue crystals has been proposed and demonstrated [Z. Zhong, C. C. Kao, D. P. Siddons, and J. B. Hastings, J. Appl. Crystallogr., Pts I&II (submitted)]. At high x-ray energies, sagittal focusing by a Laue crystal is preferred because of the...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics