Anisotropic laser etching of oxidized (100) silicon

Arnone, C.; Scelsi, G. B.
January 1989
Applied Physics Letters;1/16/1989, Vol. 54 Issue 3, p225
Academic Journal
Laser-induced anisotropic chemical etching of silicon is reported, by using a 488 nm Ar+ laser in direct write mode and high-pressure Cl2 process gas. Surface modifications directly comparable with conventional anisotropic wet etching methods have been obtained. A main role in the process is played by the masking effect due to a thin uniform SiO2 film grown on the Si substrate. An explanation of the etching mechanism is attempted.


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