Growth and characterization of (111) oriented GaInAs/GaAs strained-layer superlattices

Beery, J. G.; Laurich, B. K.; Maggiore, C. J.; Smith, D. L.; Elcess, K.; Fonstad, C. G.; Mailhiot, C.
January 1989
Applied Physics Letters;1/16/1989, Vol. 54 Issue 3, p233
Academic Journal
We describe the growth, ion beam, and photoluminescence characterization of Ga1-xInxAs/GaAs strained-layer superlattices grown along the [111] axis. The layer thicknesses and composition are determined by Rutherford backscattering. Normal incidence channeling gives a minimum channeling yield of 5.7%. Strain conditions are found by off-normal incidence channeling using the angular scan method. Comparison of the photoluminescence spectrum of the superlattice with theoretical calculations provides strong evidence for the existence of strain-generated electric fields in [111] growth axis strained-layer superlattices.


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