TITLE

High quality ZnTe-ZnSe strained-layer superlattice with buffer layer prepared by hot wall epitaxy

AUTHOR(S)
Wu, Y. H.; Yang, H.; Ishida, A.; Fujiyasu, H.; Nakashima, S.; Tahara, K.
PUB. DATE
January 1989
SOURCE
Applied Physics Letters;1/16/1989, Vol. 54 Issue 3, p239
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
High quality ZnTe-ZnSe strained-layer superlattices grown on GaAs (001) substrates have been obtained by the hot wall epitaxy technique through introducing ZnTe and ZnSe buffers. Raman scattering from folded longitudinal acoustic phonons was observed. High-angle satellite reflection peaks due to Cu Kα1 and Kα2 radiations were clearly resolved in the x-ray diffraction patterns, and these patterns can be almost interpreted by a simple step model. The effect of the buffer layer on the strain of the superlattice is evaluated from the results of Raman scattering and x-ray diffraction measurements.
ACCESSION #
9829602

 

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