Thermal equilibrium changes in diode structures of doped amorphous silicon

Jang, Jin; Lee, Young Kuen; Kim, Sung Chul; Lee, Choochon
January 1989
Applied Physics Letters;1/16/1989, Vol. 54 Issue 3, p250
Academic Journal
Thermal equilibration processes in diode structures of doped hydrogenated amorphous silicon have been studied. Fast cooling from above the thermal equilibrium temperature (TE) results in an increase in dark reverse current as well as in forward current. The reverse leakage current and the diode quality factor increase with quenching temperature at above TE. Therefore, it is concluded that the densities of metastable dangling bonds and active dopants increase upon fast cooling from above TE. We propose a new model to explain the experimental results.


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