TITLE

Depth-dependent native-defect-induced layer disordering in AlxGa1-xAs-GaAs quantum well heterostructures

AUTHOR(S)
Guido, L. J.; Holonyak, N.; Hsieh, K. C.; Baker, J. E.
PUB. DATE
January 1989
SOURCE
Applied Physics Letters;1/16/1989, Vol. 54 Issue 3, p262
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Photoluminescence measurements on annealed single-well Alx Ga1-x As-GaAs quantum well heterostructures demonstrate that layer disordering caused by native defects is strongly depth dependent. The depth-dependent layer disordering, as well as the corresponding depth-dependent net carrier concentration, is a consequence of the re-equilibration of the V-Ga vacancy and the As+Ga antisite native defect concentrations via the crystal surface.
ACCESSION #
9829588

 

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