TITLE

Interface properties of HgCdTe metal-insulator-semiconductor capacitors

AUTHOR(S)
Yang, M. J.; Yang, C. H.; Kinch, M. A.; Beck, J. D.
PUB. DATE
January 1989
SOURCE
Applied Physics Letters;1/16/1989, Vol. 54 Issue 3, p265
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The conductance method has been used to measure the density of interface states of the ZnS/Hg0.775Cd0.225Te metal-insulator-semiconductor (MIS) system with three different HgCdTe surface treatments. It is found that the density of fast interface states increases from ∼1011 eV-1 cm-2 at the conduction-band minimum to ∼1013 eV-1 cm-2 near the valence-band maximum. In addition, the interface states located in the lower part of the band gap communicate with the valence band so efficiently that the effective band gap is reduced. Our observations explain why the p-type MIS photodiode is superior to the n-type version in terms of breakdown voltage and storage time.
ACCESSION #
9829585

 

Related Articles

  • Series resistance calculation for the Metal-Insulator-Semiconductor Schottky barrier diodes. Saglam, M.; Ayyildiz, E.; G�m�s, A.; T�r�t, A.; Efeoglu, H.; T�zemen, S. // Applied Physics A: Materials Science & Processing;1996, Vol. 62 Issue 3, p269 

    An accurate way of determining the series resistance R[sub s] of Schottky Barrier Diodes (SBDs) with and without the interfacial oxide layer using forward current�voltage (I�V) characteristics is discussed both theoretically and experimentally by taking into account the applied voltage...

  • Si[sub 3]N[sub 4]/Si/n-GaAs capacitor with minimum interface density in the 10[sup 10].... Wang, Z.; Lin, M.E.; Biswas, D.; Mazhari, B.; Terguchi, N.; Fan, Z.; Gui, X.; Morkoc, H. // Applied Physics Letters;6/7/1993, Vol. 62 Issue 23, p2977 

    Presents the Si[sub 3]N[sub 4]/silicon/gallium arsenide capacitors with minimum interface density. Assistance of atomic hydrogen during in situ growth of silicon; Details on the hysteresis and frequency dispersion levels in the metal-insulator-semiconductor capacitor.

  • Physical parameters of GaInAs/Si3N4 interface states obtained by the conductance method. Barrier, Joël; Boher, Pierre; Renaud, Monique // Applied Physics Letters;9/26/1988, Vol. 53 Issue 13, p1192 

    Interface state parameters were studied in TiAu/Si3N4/Ga0.47In0.53As metal-insulator-semiconductor capacitors by conductance and capacitance measurements at various temperatures. The analysis of the data, taking into account the variation of the capture cross section versus energy, allows us to...

  • Hysteresis free SiO2/InSb metal-insulator-semiconductor diodes. Okamura, Masamichi; Minakata, Makoto // Journal of Applied Physics;3/15/1985, Vol. 57 Issue 6, p2060 

    Introduces an in situ vapor etching technique prior to insulator deposition to improve the electrical characteristics of silicon dioxide/indium antimony (InSb) metal-insulator-semiconductor (MIS) diodes. Relation between film deposition conditions and the electrical characteristics of MIS...

  • Extraction of interface state density profile from the maximums of the parallel conductance versus applied gate bias curves Gp(Va), using the conductance technique. Papadas, C.; Morfouli, P.; Ghibaudo, G.; Pananakakis, G. // Review of Scientific Instruments;Sep92, Vol. 63 Issue 9, p4189 

    A fast method for extracting the interface trap density profile of the semiconductor-insulator interface in metal-insulator-semiconductor structures is proposed. The method is based on the well known conductance technique and extracts the interface state density profile from the maximums of the...

  • Complex admittance analysis for La[sub 2]Hf[sub 2]O[sub 7]/SiO[sub 2] high-κ dielectric stacks. Apostolopoulos, G.; Vellianitis, G.; Dimoulas, A.; Hooker, J.C.; Conard, T. // Applied Physics Letters;1/12/2004, Vol. 84 Issue 2, p260 

    A method of analyzing the complex admittance of metal-insulator-semiconductor (MIS) structures has been developed with the aim to extract the density and capture cross section of interface traps from combined ac capacitance–voltage and conductance–voltage measurements at different...

  • Electron trapping and inversion layer formation in photoexcited metal-insulator-poly(3-hexylthiophene) capacitors. Taylor, D. M.; Drysdale, J. A.; Torres, I.; Fernández, O. // Applied Physics Letters;10/30/2006, Vol. 89 Issue 18, p183512 

    Photocapacitance measurements are reported on metal-insulator-semiconductor (MIS) capacitors employing polyimide (PI) or polysilsesquioxane (PSQ) as the gate insulator and poly(3-hexylthiophene) as the active semiconductor. By stressing devices into depletion while simultaneously irradiating...

  • Influence of Ni silicide phases on effective work function modulation with Al-pileup in the Ni fully silicided gate/HfSiON system. Tsuchiya, Yoshinori; Yoshiki, Masahiko; Koga, Junji; Nishiyama, Akira; Koyama, Masato // Journal of Applied Physics;Aug2009, Vol. 106 Issue 4, p044510-1 

    Influences of Ni silicide phases on the effective work function ([uppercase_phi_synonym]eff) modulation effect with Al incorporation has been investigated in the Ni silicide/HfSiON systems. We formed metal-insulator-semiconductor capacitors with Al incorporated Ni silicide (NiSi, Ni2Si, and...

  • Effect of fluorine on the electrical properties of anodic oxide/InAs(111)A interface. Aksenov, M.; Valisheva, N.; Levtsova, T.; Tereshchenko, O. // Semiconductors;Mar2014, Vol. 48 Issue 3, p307 

    The electrical properties of metal-insulator-semiconductor structures based on InAs(111)A with thin anodic insulator layers of various thicknesses (7-20 nm) are investigated. It is established that the oxidation of InAs in a fluorinated acid electrolyte results in decreasing density of surface...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics