Variation of lattice parameter with silicon concentration in n-doped, liquid-encapsulated Czochralski GaAs single crystals

Watson, G. Patrick; Ast, Dieter; Elliot, A. Grant
January 1989
Applied Physics Letters;1/16/1989, Vol. 54 Issue 3, p271
Academic Journal
The lattice parameters of several Si-doped and undoped GaAs wafers have been measured, using the Bond x-ray diffraction technique. The relative lattice parameters of wafers from the same boule were found to decrease monotonically from seed to tail by as much as 6×10-5(δa/a), following the same trend as the increase in Si content ranging from 1.3 to 9.4×1018 cm-3 (measured by secondary-ion mass spectroscopy). A plot of the change in lattice parameter versus the Si concentration shows a linear trend with a slope which is three times larger than that predicted by Vegard’s law. Possible explanations for this discrepancy are discussed.


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