Reactive evaporation of titanium oxide films with controlled Ti/O ratio

Nozoye, H.; Nishimiya, N.; Sato, H.
January 1989
Applied Physics Letters;1/16/1989, Vol. 54 Issue 3, p231
Academic Journal
Oxidation state selected titanium oxide thin films (TinO2n-1; n=1–∞) were deposited by a combination of a pulsed molecular beam source and an electron beam metal source. The oxidation state of titanium was controlled solely by the number of gas pulses and the temperature of a substrate. The conditions for depositing crystalline TinO2n-1 thin films were determined.


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