TITLE

Band offsets for pseudomorphic InP/GaAs

AUTHOR(S)
Nolte, D. D.
PUB. DATE
January 1989
SOURCE
Applied Physics Letters;1/16/1989, Vol. 54 Issue 3, p259
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Recently determined band-edge hydrostatic deformation potentials are used to predict heterojunction band offsets for the pseudomorphic GaAs-InP system. The calculations include GaAs/InP, InP/GaAs, and strained-layer GaAs-InP superlattices for both [100] and [111] oriented epitaxial growth. The offsets are type II for the unstrained case. The large hydrostatic contributions to the stress-induced band offsets can convert the offsets to type I. This conversion is especially apparent for growth in the [111] direction because of the small Poisson ratio for biaxial stress in the (111) plane.
ACCESSION #
9829550

 

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