Band offsets for pseudomorphic InP/GaAs

Nolte, D. D.
January 1989
Applied Physics Letters;1/16/1989, Vol. 54 Issue 3, p259
Academic Journal
Recently determined band-edge hydrostatic deformation potentials are used to predict heterojunction band offsets for the pseudomorphic GaAs-InP system. The calculations include GaAs/InP, InP/GaAs, and strained-layer GaAs-InP superlattices for both [100] and [111] oriented epitaxial growth. The offsets are type II for the unstrained case. The large hydrostatic contributions to the stress-induced band offsets can convert the offsets to type I. This conversion is especially apparent for growth in the [111] direction because of the small Poisson ratio for biaxial stress in the (111) plane.


Related Articles

  • Hydrostatic extrusion at 100°C and its effect on the grain size and mechanical properties of magnesium alloys. Swiostek, J.; Letzing, D.; Kainer, K. // Metal Science & Heat Treatment;Nov2006, Vol. 48 Issue 11/12, p499 

    The microstructure and mechanical properties of magnesium alloys are studied after extrusion. Shapes are obtained from commercial magnesium alloys with the help of a rarely used technology, i.e., hydrostatic extrusion at 100°C (a temperature much lower than the one at which new slip planes...

  • Coherent acoustic phonon generation in GaAs1-xBix. Joshya, R. S.; Ptak, A. J.; France, R.; Mascarenhas, A.; Kini, R. N. // Applied Physics Letters;3/3/2014, Vol. 104 Issue 9, p1 

    We have used femtosecond laser pulses to generate coherent acoustic phonons in the dilute Bismide alloy, GaAs1-xBix. The observed oscillation periods match well with the oscillation periods calculated using the propagating strain pulse model. We attribute the generation process predominantly to...

  • Determination of Deformation Potential Constants for n- and p-Si from the Concentration Anharmonicity. Skvortsov, A.A.; Litvinenko, O.V.; Orlov, A.M. // Semiconductors;Jan2003, Vol. 37 Issue 1, p15 

    The contribution of charge carriers to the fourth-order modulus of elasticity � for n- and p-type silicon under uniaxial tension along the [110] direction was analyzed in the approximation of small strains. The effect of concentration on � was measured using spontaneous excitation of...

  • Manifestations of non-Heisenberg interactions in the temperature dependence of the NMR frequency... Kalita, V.M.; Lozenko, A.F. // Low Temperature Physics;Apr97, Vol. 23 Issue 4, p293 

    Discusses the use of the hypothesis of a non-Heisenberg nature of interionic interactions for describing anomalies in the temperature dependence of lattice deformation of a nickel chloride crystal. Estimation of non-Heisenberg spin-spin interactions from the temperature dependence of the...

  • Effect of various mechanical deformation techniques on pinning force densities in Ag/Bi-2223 tapes. Chen, W. M.; Liu, H. K.; Fu, X. K.; Guo, Y. C.; Shi, D. Q.; Dou, S. X. // AIP Conference Proceedings;2002, Vol. 614 Issue 1, p748 

    Ag/Bi-2223 tapes were fabricated using the Powder-In-Tube method, involving intermediate deformation techniques of sandwich rolling (SR), pressing (P) and normal rolling (NR). Magnetic field B dependence of J[sub c] was measured. Depending on the relationship between J[sub c] and B, the...

  • Deformation mechanism in the forcefill process. Janssen, G. C. A. M.; Jongste, J. F. // Journal of Applied Physics;1/15/2000, Vol. 87 Issue 2, p889 

    Presents information on a study which described the deformation mechanism in forcefill, a method used in metallization of integrated circuits. Experimental details; Results and discussion; Conclusions.

  • Self-deformed and hysteretic photocurrent spectra of quantum wells with a load resistor. Tokuda, Yasunori; Kanamoto, Kyozo; Tsukada, Noriaki // Applied Physics Letters;6/5/1989, Vol. 54 Issue 23, p2324 

    We report a study of the self-deformation of the photocurrent spectra of a quantum well p-i-n structure connecting with a high series resistor. The observed phenomena are interpreted in terms of the modulation of the internal electric field at the intrinsic quantum well region by the...

  • Simple method for the calculation of the deformation profiles in chiral nematic liquid crystal... Chen, C.-J.; Lien, A.; Nathan, M. I. // Journal of Applied Physics;1/1/1997, Vol. 81 Issue 1, p70 

    Presents a method for the calculation of the deformation profiles in chiral nematic liquid crystal cells. Illustration of the method in cases of an asymmetric twisted nematic cell; Applicability of the method to the study on the stability of ultraviolet type two-domain twisted nematic.

  • Band Structure of Mg[sub 2]Si and Mg[sub 2]Ge Semiconducting Compounds with a Strained Crystal Lattice. Krivosheeva, A. V.; Kholod, A. N.; Shaposhnikov, V. L.; Krivosheev, A. E.; Borisenko, V. E. // Semiconductors;May2002, Vol. 36 Issue 5, p496 

    The effect of isotropic and uniaxial deformation of a lattice on the electronic band structure of the indirect band gap Mg[sub 2]Si and Mg[sub 2]Ge semiconductors was investigated using the method of linear augmented plane waves. The reduction of the lattice constant down to 95% results in a...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics