Harmonic cross phase modulation in ZnSe

Ho, P. P.; Wang, Q. Z.; Ji, D.; Jimbo, T.; Alfano, R. R.
January 1989
Applied Physics Letters;1/9/1989, Vol. 54 Issue 2, p111
Academic Journal
The temporal profiles of harmonic cross phase modulation pulses from 500 to 570 nm generated in ZnSe by a 1054 nm picosecond pulse have been observed and theoretically modeled. The pulse shape of these harmonic-modulated pulses is accounted for by the interference and induced phase matching of the harmonic generated waves in ZnSe by cross phase modulation.


Related Articles

  • Coherent optical phonon oscillations in cubic ZnSe. Lim, Yong-Sik; Yoon, Seok-Chan; Yee, Ki-Ju; Ahn, Yeong-Hwan; Oh, E.; Lee, Jai-Hyung // Applied Physics Letters;4/14/2003, Vol. 82 Issue 15, p2446 

    We report the observation of coherent optical phonon oscillations in cubic bulk ZnSe(001). With a photon energy far below the band gap, the generation mechanism of the coherent longitudinal optical phonon mode is revealed to be the impulsive stimulated Raman scattering. Dephasing of the coherent...

  • Photoluminescence properties of ZnSe single crystalline films grown by atomic layer epitaxy. Yao, Takafumi; Takeda, Toshihiko; Watanuki, Ryuji // Applied Physics Letters;6/9/1986, Vol. 48 Issue 23, p1615 

    Atomic layer epitaxy has been employed to produce good-quality ZnSe single crystalline films onto (100) oriented GaAs substrates. The epilayers grown at 280 °C exhibited smooth and featureless surface texture and excellent photoluminescence characteristics. They showed dominant excitonic...

  • Low-temperature deposition of low resistivity ZnSe films by reactive sputtering. Stirn, R. J.; Nouhi, A. // Applied Physics Letters;6/30/1986, Vol. 48 Issue 26, p1790 

    Low resistivity semiconducting films of ZnSe have been deposited at temperatures as low as 120 °C using dc magnetron co-sputtering of Zn and In (dopant) targets in a reactive atmosphere of H2Se/Ar. Yellowish transparent films of ZnSe on glass and conductive transparent oxide-coated glass...

  • Lasing in a ZnS0.12Se0.88/ZnSe multilayer structure with photopumping. Suemune, I.; Yamada, K.; Masato, H.; Kan, Y.; Yamanishi, M. // Applied Physics Letters;3/13/1989, Vol. 54 Issue 11, p981 

    Photopumped lasing in a ZnS0.12Se0.88/ZnSe multilayer structure up to 180 K is reported for the first time. The films were grown by metalorganic vapor phase epitaxy on (001) GaAs. The purpose of using the multilayer structure is to prevent the diffusion of the photoexcited carriers to have...

  • Homoepitaxial growth of ZnSe on dry-etched substrates. Ohkawa, K.; Karasawa, T.; Yoshida, A.; Hirao, T.; Mitsuyu, T. // Applied Physics Letters;6/19/1989, Vol. 54 Issue 25, p2553 

    High quality ZnSe layers have been grown by molecular beam epitaxy on dry-etched ZnSe substrates. Surface damage caused by cutting and polishing of the ZnSe substrate was removed by dry etching using BCl3 gas to 10 μm depth. The dry-etched ZnSe substrates exhibited smooth surface morphology...

  • Studies of the Infrared Luminescence of ZnSe Doped with Copper and Oxygen. Morozova, N. K.; Karetnikov, I. A.; Blinov, V. V.; Gavrishchuk, E. M. // Semiconductors;May2001, Vol. 35 Issue 5, p512 

    The results of studying the poorly understood 700- to 2000-nm spectral region in ZnSe cathodoluminescence of condensates deposited from the vapor phase with deviations from stoichiometry and Cu and O introduction into a pure matrix are reported. The nature of cathodoluminescence in the region of...

  • Native and Impurity Defects in ZnSe:In Single Crystals Prepared by Free Growth. Vaksman, Yu. F.; Nitsuk, Yu. A.; Purtov, Yu. N.; Shapkin, P. V. // Semiconductors;Aug2001, Vol. 35 Issue 8, p883 

    The optical absorption and photoluminescence spectra and the Hall effect were studied in ZnSe:In single crystals. The presence of electrically active In[sub Zn, sup +] donor centers responsible for the impurity absorption and electrical conduction of crystals is established. It is shown that the...

  • Time-resolved luminescence studies of heavily nitrogen doped ZnSe. Kothandaraman, C.; Kuskovsky, I.; Neumark, G. F.; Park, R. M. // Applied Physics Letters;9/9/1996, Vol. 69 Issue 11, p1523 

    Time-resolved luminescence data from heavily nitrogen doped ZnSe (total N concentration exceeding mid-1018/cm3) is presented. The luminescence exhibited a decay time and a rise time which increased with decreasing energy of observation. Furthermore, both the decay times and rise times decreased...

  • Low-temperature growth of ZnSe by molecular beam epitaxy using cracked selenium. Cheng, H.; DePuydt, J. M.; Haase, M.; Potts, J. E. // Applied Physics Letters;2/26/1990, Vol. 56 Issue 9, p848 

    Growth of high quality ZnSe films has been achieved at growth temperatures as low as 150 °C by using elemental zinc and thermally cracked selenium as source materials. Crystallinity of the films was determined by the Zn/Se flux ratio rather than by the growth rate; it was possible to grow...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics