Bias-induced structure transition in reactively sputtered TiN films

Hashimoto, Keiichi; Onoda, Hiroshi
January 1989
Applied Physics Letters;1/9/1989, Vol. 54 Issue 2, p120
Academic Journal
The properties of TiN films deposited under large negative bias (up to |920| V) in dc reactive sputtering have been investigated. A crystallographic structure transition in TiN films was observed with an increase of negative substrate bias in reactive sputtering. The crystal orientation normal to the film surface changed from <111> to <200> direction at the negative substrate bias voltage higher than approximately |200| V. The crystal orientation transition was independent of substrate crystallographic information. The bias sputtered TiN film never absorbed oxygen when it was exposed to air. The porosity of TiN film has been much improved by applying a large negative substrate bias.


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