TITLE

Correlation of the optical gaps and Raman spectra of hydrogenated amorphous carbon films

AUTHOR(S)
Tamor, M. A.; Haire, J. A.; Wu, C. H.; Hass, K. C.
PUB. DATE
January 1989
SOURCE
Applied Physics Letters;1/9/1989, Vol. 54 Issue 2, p123
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The Raman and infrared absorption spectra, optical gaps, and electron spin densities of amorphous carbon films deposited from hydrocarbon plasmas have been systematically studied as a function of deposition conditions and Raman probe wavelength. Although all other probes are consistent with a monotonic increase in intermediate-range order with substrate bias voltage Vb, the optical gap decreases with increasing Vb (consistent with increasing graphitic domain size) only up to the onset of sputtering, where the gap sharply increases. We propose a simple structural model for a-C:H which is consistent with these results and requires no sp3 bonding.
ACCESSION #
9829533

 

Related Articles

  • Short-range order, microstructure and their correlation with light-induced degradation in hydrogenated amorphous silicon deposited at high growth rates by cathode heating technique. Chattopadhyay, S.; Sharma, S. N.; Banerjee, Ratnabali; Bhusari, D. M.; Kshirsagar, S. T.; Chen, Yan; Williamson, D. L. // Journal of Applied Physics;11/1/1994, Vol. 76 Issue 9, p5208 

    Examines the short-range order and microstructure of a set of films deposited in different plasma conditions using Raman scattering, small-angle x-ray scattering and infrared vibrational spectroscopy. Information on the plasma enhanced chemical vapor deposition technique; Method used for the...

  • Magnetic Ordering Effects on Raman Spectra of Hexagonal Phase of HoMnO3 Film (abstract). Hien, N. T. M.; Hoang, L. H.; Lee, D.; Jang, S.-Y.; Noh, T. W.; In-Sang Yang // AIP Conference Proceedings;4/19/2009, Vol. 1119 Issue 1, p216 

    Hexagonal HoMnO3 films were grown on Pt(111)//Al2O3 (0001) substrate by the laser ablating deposition method. Temperature dependence (15–300° K) of Raman spectra of hexagonal HoMnO3 film was studied. The hardening of the E2 phonon mode with decreasing temperature below the magnetic...

  • High-pressure Raman scattering of CdO thin films grown by metal-organic vapor phase epitaxy. Oliva, R.; Ibáñez, J.; Artús, L.; Cuscó, R.; Zúñiga-Pérez, J.; Muñoz-Sanjosé, V. // Journal of Applied Physics;Feb2013, Vol. 113 Issue 5, p053514 

    We have performed Raman-scattering measurements under high hydrostatic pressure on CdO thin films grown by metal-organic vapor phase epitaxy on sapphire substrates. The pressure dependence of the second-order Raman bands is discussed in terms of ab initio lattice-dynamical calculations, which...

  • Optical and structural properties of thin films precipitated from the sol of silicon nanoparticles. Dorofeev, S. G.; Kononov, N. N.; Ishchenko, A. A.; Vasil'ev, R. B.; Goldschtrakh, M. A.; Zaitseva, K. V.; Koltashev, V. V.; Plotnichenko, V. G.; Tikhonevich, O. V. // Semiconductors;Nov2009, Vol. 43 Issue 11, p1420 

    A new technique of growing nanocrytalline silicon ( nc-Si) thin films is suggested. The technique involves the centrifuge-assisted size-selective deposition of nanoparticles from a colloidal solution (sol) containing nc-Si powders. The structural and optical parameters of the initial nc-Si...

  • A Method for Measuring the Raman Scattering Spectra of Thin Films. Dianov, E. M.; Intyushin, E. B.; Koltashev, V. V.; Plotnichenko, V. G.; Chigirinskii, Yu. I. // Instruments & Experimental Techniques;Sep/Oct2004, Vol. 47 Issue 5, p662 

    A simple method for measuring Raman light scattering by thin films is proposed. It allows the negative effect of the substrate material onto which various coatings are deposited to be excluded. Raman scattering spectra are presented.

  • Low-lying lattice modes of highly uniform pentacene monolayers. Rui He; Tassi, Nancy G.; Blanchet, Graciela B.; Pinczuk, Aron // Applied Physics Letters;6/1/2009, Vol. 94 Issue 22, p223310 

    The authors report that monolayers of pentacene grown on a functionalized polymeric substrate display high uniformity that enable observations of Raman spectra of low-lying optical vibrations. The evolution of the frequencies and widths of the modes has been studied in films reaching the single...

  • In-depth resolved Raman scattering analysis of secondary phases in Cu-poor CuInSe2 based thin films. Fontané, X.; Izquierdo-Roca, V.; Calvo-Barrio, L.; Álvarez-Garcia, J.; Pérez-Rodríguez, A.; Morante, J. R.; Witte, W. // Applied Physics Letters;9/21/2009, Vol. 95 Issue 12, p121907 

    Raman scattering analysis of Cu-poor CuInSe2 layers shows the coexistence of the ordered vacancy compound (OVC), CuAu–CuInSe2 and chalcopyrite (CH) CuInSe2 phases as function of the Cu/In content ratio x. In-depth resolved measurements from layers with x≤0.57 show a strong...

  • Doping behavior of phosphorus in ZnO thin films: Effects of doping concentration and postgrowth thermal annealing. Liu, H. F.; Chua, S. J. // Applied Physics Letters;3/1/2010, Vol. 96 Issue 9, p091902 

    Effects of phosphorus concentration, [P], and postgrowth annealing on the x-ray diffraction and Raman scattering from ZnO:P thin films are presented. The ZnO (0002) diffraction peak exhibits a large monotonic angular shift with increasing [P] up to 5.1×1019 cm-3 while its shift upon...

  • Raman spectroscopy of nanocrystalline and amorphous GaN. Trodahl, H. J.; Budde, F.; Ruck, B. J.; Granville, S.; Koo, A.; Bittar, A. // Journal of Applied Physics;4/15/2005, Vol. 97 Issue 8, p084309 

    We report Raman measurements on thin films of strongly disordered GaN and GaN:O prepared by ion-assisted deposition. The incident photon energies used in the experiments ranged from 1.95 to 3.8 eV, spanning the interband edge. Under subgap excitation the signal resembles the crystalline GaN...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics