TITLE

Triethylgallium adsorption on Si(100) and Si(111) surfaces

AUTHOR(S)
Hirayama, Hiroyuki; Sasaoka, Chiaki; Tatsumi, Toru; Ohshita, Yoshio
PUB. DATE
January 1989
SOURCE
Applied Physics Letters;1/9/1989, Vol. 54 Issue 2, p126
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Triethylgallium (TEG) adsorption on Si(100) 2×1 and Si(111) 7×7 surfaces was studied by reflection high-energy electron diffraction (RHEED) and x-ray photoelectron spectroscopy (XPS). At room temperature, TEG molecules nondissociatively adsorbed on Si surface. Being judged from the Ga 2P3/2 and C 1s peak height, TEG molecules dissociatively adsorbed and Ga was selectively deposited on Si surfaces at temperatures between 200 and 500 °C. At temperatures above 500 °C, Ga thermal desorption was observed. RHEED pattern showed the β-SiC growth in this temperature range. Temperature dependence of the Ga 2P3/2 peak at Si(100) was different from that at Si(111), which strongly suggests that the surface dangling bond plays an important role in TEG dissociative adsorption.
ACCESSION #
9829531

 

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