Carrier-injection-type optical switch in GaAs with a 1.06–1.55 μm wavelength range

Ito, Fumihiko; Tanifuji, Tadatoshi
January 1989
Applied Physics Letters;1/9/1989, Vol. 54 Issue 2, p134
Academic Journal
A carrier-injection-type optical switch which operates in the 1.06–1.55 μm wavelength range is designed and fabricated. This switch uses the plasma dispersion effect in GaAs. Switching current is about 90 mA at all in-range wavelengths. Its broad wavelength range is suitable for optical signal processing applications in wavelength division multiplexing transmission systems.


Related Articles

  • Bi12(GaxBi1-x)O19.5 optical waveguides grown by pulsed laser deposition. Alfonso, J. E.; Martín, M. J.; Mendiola, J.; Ruiz, A.; Zaldo, C.; da Silva, M. F.; Soares, J. C. // Journal of Applied Physics;6/1/1996, Vol. 79 Issue 11, p8210 

    Presents information on a study that deposited Bi[sub12](Ga[subx]Bi[sub1 x)O[sub19.5] films with cationic stoichiometry close to x=0.5 by pulse laser deposition. Experimental techniques; Experimental results and discussion; Conclusion.

  • Polymer-based optical waveguide devices speed connections. Chen, Ray T.; Li, Bing; Foshee, James J.; Hartman, Walter B.; Tang, Suning // Laser Focus World;Aug2000, Vol. 36 Issue 8, p139 

    Reports that polymer-based optical waveguide devices provide an alternative approach for realizing the next generation of optoelectronic integrated circuit. Formation of the polymer waveguides; Integration of polymer planar and channel waveguides to substrate; Discussion on high-speed,...

  • Migration of two ions during electrolysis of glass waveguide. Yoshida, Hiroyuki; Kataoka, Takeshi // Journal of Applied Physics;9/1/1985, Vol. 58 Issue 5, p1739 

    Analyzes the entire fabrication process of an optical waveguide with a gradient index profile in planar sodalime glass substrate by using the Nernst-Planek equation. Effect of the diffusivity ratio of ions and the electric current on the concentration profile of the impurity; Conditions for...

  • Near-field photocurrent imaging of the optical mode profiles of semiconductor laser diodes. Guenther, T.; Malyarchuk, V.; Tomm, J. W.; Mu¨ller, R.; Lienau, C.; Luft, J. // Applied Physics Letters;3/12/2001, Vol. 78 Issue 11, p1463 

    The potential of near-field photocurrent spectroscopy for direct imaging of mode profiles of submicron-sized waveguides in optoelectronic devices is demonstrated. The technique combines the submicron spatial resolution of near-field optics with tunable laser excitation, allowing for selective...

  • Reconstruction of parameters of an adlayer on the surface of a channel optical waveguide. Primak, I.U.; Sotskaya, L.I. // Optical & Quantum Electronics;Feb2003, Vol. 35 Issue 3, p275 

    A simple solution of an inverse problem of reconstruction of thickness, permittivity and surface coverage of an adlayer disposed on the surface of a channel optical waveguide is proposed and substantiated theoretically. It is shown that the reconstruction errors for the parameters of the adlayer...

  • Nd:YAG lasers at 1064 nm with 1-Hz linewidth. Jiang, Y.; Fang, S.; Bi, Z.; Xu, X.; Ma, L. // Applied Physics B: Lasers & Optics;Jan2010, Vol. 98 Issue 1, p61 

    Two Nd:YAG lasers are tightly frequency-stabilized to separately located, vertically mounted ultrastable cavities, which are connected by single-mode optical fibers employing fiber phase noise cancellation. The optical heterodyne beat between two independent lasers shows that the linewidth of...

  • All-optical modulator is capable of terahertz speeds. Hochberg, Michael // Laser Focus World;Nov2006, Vol. 42 Issue 11, p11 

    The article claims that intensity modulation at frequencies in excess of 1 terahertz could be obtained by directly measuring time-domain intensity modulation at 10 GHz as demonstrated by the researchers at the California Institute of Technology. It explains that integrating the optical polymer...

  • Silicon-waveguide modulator reaches 20 Gbit/s. Wallace, John // Laser Focus World;Mar2007, Vol. 43 Issue 3, p28 

    The article reports that researchers at Intel Corp. in Santa Clara, California have unveiled a silicon-based optical modulator that operates at 30 gigabits per second. With the combination of hybrid lasers, the device will form high data rate light source. The optical modulator is based on the...

  • Study of polarization mode dispersion in a South African optical fibre network. Conibear, A. B.; Leitch, A. W. R.; Sibaya, N. A.; Gibbon, T. B.; Viljoen, L. // South African Journal of Science;May/Jun2005, Vol. 101 Issue 5/6, preceding p276 

    Polarization mode dispersion (PMD) poses one of the main limitations to upgrading optical fibre links to higher data transmission rates. We report on PMD measurements made on the South African optical fibre network and show that most of the fibres studied are currently unsuitable for upgrading...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics