Growth of InP on Si substrates by molecular beam epitaxy

Crumbaker, T. E.; Lee, H. Y.; Hafich, M. J.; Robinson, G. Y.
January 1989
Applied Physics Letters;1/9/1989, Vol. 54 Issue 2, p140
Academic Journal
The growth of single-crystal InP films on (100) Si substrates by molecular beam epitaxy (MBE) is described. Three different buffer layers were grown by gas-source MBE in order to reduce the density of dislocations created by the 8% InP-Si lattice mismatch. Double-crystal x-ray diffraction revealed that all buffer layers produced large-area single-crystal (100) InP films with the InP lattice tilted towards the <100> Si directions. A buffer layer of four Inx Ga1-x P/Iny Ga1-y P strained superlattices produced a specular InP film with an estimated dislocation density of 108 –109 cm-2 and a residual stress of less than 5×10-4.


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