TITLE

Resonant tunneling diodes for switching applications

AUTHOR(S)
Diamond, S. K.; Özbay, E.; Rodwell, M. J. W.; Bloom, D. M.; Pao, Y. C.; Harris, J. S.
PUB. DATE
January 1989
SOURCE
Applied Physics Letters;1/9/1989, Vol. 54 Issue 2, p153
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Rise times for simple pulse-forming circuits are presented. Switching times for present best devices are in the range of 5–15 ps. An equivalent circuit model for resonant tunneling diodes inclusive of space-charge effects and transit time effects in the depletion region is presented. From these models it is shown that switching times are limited by the device RC time constants and are relatively unaffected by the resonant state lifetime or depletion layer transit times. Appropriate figures of merit for switching applications are the device capacitance and peak current density. Less emphasis should be placed on improving the peak-to-valley ratio. Optimally designed devices which maximize the current density should be capable of switching in under 5 ps.
ACCESSION #
9829511

 

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