TITLE

Spectroscopic investigation of oxide states responsible for hot-carrier degradation

AUTHOR(S)
Weber, W.; Brox, M.; Hofmann, F.; Huber, H.; Jäger, D.; Rieger, D.
PUB. DATE
January 1989
SOURCE
Applied Physics Letters;1/9/1989, Vol. 54 Issue 2, p168
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Hole-trap states in the gate oxide of a Si metal-oxide-semiconductor field-effect transistor (MOSFET) are investigated by inhomogeneous excimer laser irradiation. Subbandgap ultraviolet light photons with an energy exceeding a threshold lying between 5.5 and 6.4 eV were found to excite electrons from these originally neutral states into the SiO2 conduction band. A fixed positive charge is left behind. The degradation in MOSFET performance due to the irradiation is comparable to that accompanying hot-hole injection. Also, subsequent hot-electron stress changes the device characteristics in a way similar to hot-electron stress following hot-hole stress. It is concluded that the traps responsible for hot-carrier degradation cause the optically induced charge trapping.
ACCESSION #
9829500

 

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