TITLE

High-speed InP/InGaAsP metal-semiconductor field-effect transistors grown by chloride vapor phase epitaxy

AUTHOR(S)
Antreasyan, A.; Garbinski, P. A.; Mattera, V. D.; Feuer, M. D.; Filipe, J.; Chu, S. N. G.
PUB. DATE
January 1989
SOURCE
Applied Physics Letters;1/9/1989, Vol. 54 Issue 2, p176
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report the fabrication of enhancement mode InGaAsP/InP metal-semiconductor field-effect transistors having gate lengths of 2 μm. The epitaxial layers for this structure have been grown by chloride vapor phase epitaxy. The devices show extrinsic transconductances as high as 220 mS/mm, a short-circuit current gain cutoff frequency of fT=5.2 GHz, and a maximum available power gain cutoff frequency of fmax=9.5 GHz. A novel gate technology has been utilized where a lower band-gap quaternary InGaAsP layer of about 350 Å thickness is grown on the top of the InP channel layer.
ACCESSION #
9829495

 

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