Amorphous silicon photoconductive diode

Hack, M.; Shur, M.; Tsai, C. C.
January 1989
Applied Physics Letters;1/9/1989, Vol. 54 Issue 2, p96
Academic Journal
In this letter we describe the operation of a new high-speed, high-gain amorphous silicon sensor. The device gain originates from the photoconductive properties of amorphous silicon but good light to dark sensitivity is obtained by suppressing the sensor dark current by means of a lightly p-type barrier layer. Optical gains in excess of 100 have been achieved with response times of approximately 200 μs.


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