TITLE

High quality GaAs quantum well lasers grown on InP substrates by organometallic chemical vapor deposition

AUTHOR(S)
Chang-Hasnain, C. J.; Lo, Y. H.; Bhat, R.; Stoffel, N. G.; Lee, T. P.
PUB. DATE
January 1989
SOURCE
Applied Physics Letters;1/9/1989, Vol. 54 Issue 2, p156
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
High quality GaAs quantum well lasers grown on (100) and 3°-off (100)InP substrates by organometallic chemical vapor deposition were investigated for the first time. 50-μm-wide broad-area gain-guided lasers were fabricated using preferential proton implantation. Low threshold densities, 800 and 1080 A/cm2, were obtained at room temperature for lasers with 1.25-mm-long cavities grown on 3°-off (100) and (100) oriented InP substrates, respectively. High quantum efficiency of 36% and nearly single longitudinal mode emission were also achieved from these lasers.
ACCESSION #
9829466

 

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