High quality GaAs quantum well lasers grown on InP substrates by organometallic chemical vapor deposition

Chang-Hasnain, C. J.; Lo, Y. H.; Bhat, R.; Stoffel, N. G.; Lee, T. P.
January 1989
Applied Physics Letters;1/9/1989, Vol. 54 Issue 2, p156
Academic Journal
High quality GaAs quantum well lasers grown on (100) and 3°-off (100)InP substrates by organometallic chemical vapor deposition were investigated for the first time. 50-μm-wide broad-area gain-guided lasers were fabricated using preferential proton implantation. Low threshold densities, 800 and 1080 A/cm2, were obtained at room temperature for lasers with 1.25-mm-long cavities grown on 3°-off (100) and (100) oriented InP substrates, respectively. High quantum efficiency of 36% and nearly single longitudinal mode emission were also achieved from these lasers.


Related Articles

  • Ultrabroad stimulated emission from quantum well laser. Huolei Wang; Xuliang Zhou; Hongyan Yu; Junping Mi; Jiaqi Wang; Jing Bian; Ying Ding; Weixi Chen; Wei Wang; Jiaoqing Pan // Applied Physics Letters;6/23/2014, Vol. 104 Issue 25, p1 

    Observation of ultrabroad stimulated emission from a simplex quantum well based laser at the center wavelength of 1.06 μm is reported. With increased injection current, spectrum as broad as 38 nm and a pulsed output power of ~50mW have been measured. The experiments show evidence of an...

  • Use of tertiarybutylarsine in the fabrication of GaAs/AlGaAs quantum wells and quantum well lasers. Hummel, S. G.; Beyler, C. A.; Zou, Y.; Grodzinski, P.; Dapkus, P. D. // Applied Physics Letters;8/13/1990, Vol. 57 Issue 7, p695 

    Tertiarybutylarsine was used in the growth of GaAs and AlGaAs by metalorganic chemical vapor deposition over a range of compositions and V/III ratios. GaAs layers were obtained with both n- and p-type background carrier concentrations in the low 1014 cm-3 range. AlGaAs was grown at 20, 30, and...

  • Spatial mode structure of broad-area semiconductor quantum well lasers. Chang-Hasnain, C. J.; Kapon, E.; Bhat, R. // Applied Physics Letters;1/16/1989, Vol. 54 Issue 3, p205 

    The spatial mode characteristics of gain-guided broad-area quantum well lasers grown by organometallic chemical vapor deposition were investigated experimentally. GaAs/AlGaAs quantum well lasers grown on 6°-off (100) oriented substrates exhibit excellent material uniformity, which allows...

  • Dark-line observations in failed quantum well lasers. Waters, R. G.; Bertaska, R. K. // Applied Physics Letters;4/18/1988, Vol. 52 Issue 16, p1347 

    The electron-beam-induced current technique has been used to disclose dark-line patterns in degraded AlxGa1-xAs quantum well lasers. At least four distinct types of pattern exist, each being characteristic of a particular device structure.

  • Temperature engineered growth of low-threshold quantum well lasers by metalorganic chemical vapor deposition. Dzurko, K. M.; Menu, E. P.; Beyler, C. A.; Osinski, J. S.; Dapkus, P. D. // Applied Physics Letters;1/9/1989, Vol. 54 Issue 2, p105 

    A new technique is demonstrated for the formation of narrow active regions in quantum well lasers. In temperature engineered growth (TEG), the substrate temperature is varied during the growth of epitaxial layers by metalorganic chemical vapor deposition (MOCVD) on nonplanar substrates, allowing...

  • High-performance and high-temperature continuous-wave-operation 1300 nm InGaAsN quantum well lasers by organometallic vapor phase epitaxy. Tansu, Nelson; Quandt, Andrew; Kanskar, Manoj; Mulhearn, William; Mawst, Luke J. // Applied Physics Letters;7/7/2003, Vol. 83 Issue 1, p18 

    Comtinuous-wave (cw) operation of organometallic vapor phase epitaxy-grown In[SUB0.4]Ga[SUB0.6]As[SUB0.995]N[SUB0.005] quantum well (QW) lasers has been realized, at a room-temperature near-threshold emission wavelength of 1.295 mm, with a threshold-current density of 220 A/cm[SUP2] for 2000...

  • High-power InGaAs/GaAs quantum-well laser with enhanced broad spectrum of stimulated emission. Huolei Wang; Hongyan Yu; Xuliang Zhou; Qiang Kan; Lijun Yuan; Weixi Chen; Wei Wang; Ying Ding; Jiaoqing Pan // Applied Physics Letters;10/6/2014, Vol. 105 Issue 14, p1 

    We report the demonstration of an InGaAs/GaAs quantum well (QW) broadband stimulated emission laser with a structure that integrated a GaAs tunnel junction with two QW active regions. The laser exhibits ultrabroad lasing spectral coverage of ~51 nm at a center wavelength of 1060 nm with a total...

  • High quality narrow GaInAs/InP quantum wells grown by atmospheric organometallic vapor phase epitaxy. Miller, B. I.; Schubert, E. F.; Koren, U.; Ourmazd, A.; Dayem, A. H.; Capik, R. J. // Applied Physics Letters;11/17/1986, Vol. 49 Issue 20, p1384 

    A series of GaInAs/InP quantum wells from 10 to 135 Ã… has been grown by atmospheric organometallic vapor phase epitaxy using pressure balancing techniques. These wells exhibit strong exciton peaks at 4 K and have quantized energy shifts of up to 326 meV. These energy shifts are compared with...

  • Quantum-confined Stark effect in InGaAs/InP quantum wells grown by organometallic vapor phase epitaxy. Bar-Joseph, I.; Klingshirn, C.; Miller, D. A. B.; Chemla, D. S.; Koren, U.; Miller, B. I. // Applied Physics Letters;4/13/1987, Vol. 50 Issue 15, p1010 

    We report the first observation of the quantum-confined Stark effect in InGaAs/InP multiple quantum wells grown by organometallic vapor phase epitaxy. The effect is observed both in transmission and photoconductivity measurements. The observed spectral shift agrees with the theory.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics