Arsenic-doped CdTe epilayers grown by photoassisted molecular beam epitaxy

Harper, R. L.; Hwang, S.; Giles, N. C.; Schetzina, J. F.; Dreifus, D. L.; Myers, T. H.
January 1989
Applied Physics Letters;1/9/1989, Vol. 54 Issue 2, p170
Academic Journal
We report the successful p-type doping of CdTe films with arsenic using the photoassisted molecular beam epitaxy growth technique. These doped epilayers were grown at substrate temperatures as low as 180 °C. The room-temperature hole concentrations in the CdTe:As layers ranged from 7×1015 to 6.2×1018 cm-3 as determined by van der Pauw–Hall effect measurements. We propose a doping mechanism responsible for the high p-type doping levels observed in the films. The arsenic acceptor ionization energy was found to ∼58–60 meV using low-temperature photoluminescence measurements.


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