Sticking coefficient of the SiH2 free radical on a hydrogenated silicon-carbon surface

Robertson, Robert M.; Rossi, Michel J.
January 1989
Applied Physics Letters;1/9/1989, Vol. 54 Issue 2, p185
Academic Journal
The sticking coefficient of SiH2 on a hydrogenated silicon-carbon surface is measured in a low-pressure pulsed-photolysis experiment. Thermal and vibrationally excited SiH2 are created by infrared multiphoton decomposition of n-butylsilane. The first-order wall loss rates of the radicals are determined from the time dependence of the resonance-enhanced multiphoton ionization signal. The sticking coefficients of SiH2 (∼0.1) and vibrationally hot SiH2 (>0.5) are determined from the measured first-order loss rate constants and the calculated wall collision rate constant.


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