Very high speed GaInAs metal-semiconductor-metal photodiode incorporating an AlInAs/GaInAs graded superlattice

Wada, O.; Nobuhara, H.; Hamaguchi, H.; Mikawa, T.; Tackeuchi, A.; Fujii, T.
January 1989
Applied Physics Letters;1/2/1989, Vol. 54 Issue 1, p16
Academic Journal
A lateral structure metal-semiconductor-metal photodiode has been fabricated on GaInAs, in which an AlInAs/GaInAs graded superlattice has been incorporated. This photodiode has exhibited a dark current lower than 100 nA, an internal quantum efficiency of greater than 80% at a wavelength of 1.3 μm, and a capacitance of 40 fF, all at the bias voltage of 10 V. The response speed of this photodiode has been characterized by electro-optic sampling to exhibit a full width at half maximum of 14.7 ps.


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