Dependence of the GaAs/AlGaAs superlattice ionization rate on Al content

Kagawa, Toshiaki; Iwamura, Hidetoshi; Mikami, Osamu
January 1989
Applied Physics Letters;1/2/1989, Vol. 54 Issue 1, p33
Academic Journal
Al content dependence of GaAs/Alx Ga1-xAs superlattice ionization rates was studied. The electron ionization rate is enhanced when the AlGaAs of the barrier is a direct transition type. It is drastically reduced at the Γ-X band crossover in the AlGaAs layer. The ionization rate ratio (hole to electron) as determined by excess multiplication noise measurement is reduced from a value of 0.5 at x=0.3 to 0.14 at x=0.45. At higher values of x, corresponding to the onset of indirect electron transitions, the noise is increased.


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