TITLE

Low-temperature mobility of two-dimensional electron gas in selectively doped pseudomorphic N-AlGaAs/GaInAs/GaAs structures

AUTHOR(S)
Ohno, H.; Luo, J. K.; Matsuzaki, K.; Hasegawa, H.
PUB. DATE
January 1989
SOURCE
Applied Physics Letters;1/2/1989, Vol. 54 Issue 1, p36
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Low-field mobility of two-dimensional electron gas (2DEG) in selectively doped pseudomorphic N-Al0.3Ga0.7As/ Ga0.8In0.13As/GaAs structures was measured as a function of carrier concentration as well as a function of temperature. In order to explain the observed mobility characteristics, scattering due to clustering has been considered. It is shown that the low-field mobility of 2DEG at low temperature (<40 K) can be explained by the scattering due to clustering together with the remote ionized impurity scattering.
ACCESSION #
9829444

 

Related Articles

  • Effects of two-dimensional electron gas on the optical properties of InAs/GaAs quantum dots in modulation-doped heterostructures. Kim, T. W.; Kim, J. H.; Lee, H. S.; Lee, J. Y.; Kim, M. D. // Applied Physics Letters;1/10/2005, Vol. 86 Issue 2, p021916 

    The Shubnikov–de Haas data showed that the carrier density of two-dimensional electron gas (2DEG) in the GaAs active region containing InAs quantum dot (QD) arrays embedded between modulation-doped Al0.25Ga0.75As/GaAs heterostructures increased with increasing doping concentration in the...

  • Growth and transport properties of InAs epilayers on GaAs. Kalem, Seref; Chyi, Jen-Inn; Morkoç, Hadis; Bean, Ross; Zanio, Ken // Applied Physics Letters;10/24/1988, Vol. 53 Issue 17, p1647 

    A series of InAs epitaxial layers with thicknesses ranging from 0.5 up to 6.2 μm was grown on (100) oriented semi-insulating GaAs substrates by molecular beam epitaxy. The transport properties of the layers have been investigated by Hall effect measurements down to 10 K. The properties of the...

  • Growth and Magneto-transport Characterization of Double-doped InGaAs/InAlAs Heterostructures with High Indium Compositions. Akabori, M.; Morimoto, K.; Wei, W.; Iwase, H.; Yamada, S. // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p725 

    We investigated double-doped InGaAs/InAlAs heterostructures with high indium compositions. The heterostructures were grown by molecular beam epitaxy on GaAs(001) with metamorphic step-graded buffer layers. The magneto-transport characterization was performed by using Hall-bar devices. We...

  • Demonstration of large peak-to-valley current ratios in InAs/AlGaSb/InAs single-barrier heterostructures. Söderström, J. R.; Chow, D. H.; McGill, T. C. // Applied Physics Letters;9/25/1989, Vol. 55 Issue 13, p1348 

    We report large peak-to-valley current ratios in InAs/AlxGa1-xSb/InAs single-barrier tunnel structures. The mechanism for single-barrier negative differential resistance (NDR) has been proposed and demonstrated recently. A peak-to-valley current ratio of 3.4 (1.2) at 77 K (295 K), which is...

  • Growth of a novel InAs-GaAs strained layer superlattice on InP. Tamargo, M. C.; Hull, R.; Greene, L. H.; Hayes, J. R.; Cho, A. Y. // Applied Physics Letters;3/15/1985, Vol. 46 Issue 6, p569 

    Strained layer superlattice structures with ultrathin, alternating InAs and GaAs layers have been grown on buffer layers lattice matched to InP. Low angle x-ray scattering and transmission electron microscopy studies were used to characterize the layers.

  • Pulsed laser atom probe analysis of GaAs and InAs. Cerezo, A.; Grovenor, C. R. M.; Smith, G. D. W. // Applied Physics Letters;3/15/1985, Vol. 46 Issue 6, p567 

    A pulsed laser atom probe has been used to obtain the first stoichiometrically correct analysis of GaAs and InAs. These results are presented, together with a comparison of results obtained from conventional and pulsed laser atom probes.

  • Selective area growth of GaAs and In0.53Ga0.47As epilayer structures by chemical beam epitaxy using silicon shadow masks: A demonstration of the beam nature. Tsang, W. T. // Applied Physics Letters;4/15/1985, Vol. 46 Issue 8, p742 

    Selective area growth of GaAs and In0.53Ga0.47As epilayer structure with well-defined smooth edges has been achieved with a Si mask shadowing technique for chemical beam epitaxy (CBE). Epilayer stripes with widths as narrow as 2–5 μm have been replicated. An experiment was also...

  • Carbon implantation in InGaAs and AlInAs. Pearton, S. J.; Hobson, W. S.; Kinsella, A. P.; Kovalchick, J.; Chakrabarti, U. K.; Abernathy, C. R. // Applied Physics Letters;3/26/1990, Vol. 56 Issue 13, p1263 

    It is shown for the first time that carbon behaves predominantly as an acceptor in InGaAs and AlInAs under co-implantation conditions. The co-implanted ion, regardless of species, acts to create vacant lattice sites for occupation by the carbon. Implantation of 40 keV carbon ions alone at doses...

  • Terahertz transmission characteristics of high-mobility GaAs and InAs two-dimensional-electron-gas systems. Kabir, N. A.; Yoon, Y.; Knab, J. R.; Chen, J.-Y.; Markelz, A. G.; Reno, J. L.; Sadofyev, Y.; Johnson, S.; Zhang, Y.-H.; Bird, J. P. // Applied Physics Letters;9/25/2006, Vol. 89 Issue 13, p132109 

    Frequency-dependent complex conductivity of high-mobility GaAs and InAs two-dimensional-electron-gas (2DEG) systems is studied by terahertz time domain spectroscopy. Determining the momentum relaxation time from a Drude model, the authors find a lower value than that from dc measurements,...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics