p-type modulation-doped HgCdTe

Han, Jeong W.; Hwang, S.; Lansari, Y.; Harper, R. L.; Yang, Z.; Giles, N. C.; Cook, J. W.; Schetzina, J. F.; Sen, S.
January 1989
Applied Physics Letters;1/2/1989, Vol. 54 Issue 1, p63
Academic Journal
At North Carolina State University, we have recently employed photoassisted molecular beam epitaxy to successfully prepare p-type modulation-doped HgCdTe. The modulation-doped HgCdTe samples were grown on lattice-matched (100) CdZnTe substrates cut from boules grown at Santa Barbara Research Center. In this letter, we report details of the growth experiments and describe the structural, optical, and electrical properties that this new infrared quantum alloy of HgCdTe possesses.


Related Articles

  • Charge-carrier lifetime in Hg[sub 1-x]Cd[sub x]Te (x=0.22) structures grown by molecular-beam epitaxy. Voıtsekhovskiı, A. V.; Denisov, Yu. A.; Kokhanenko, A. P.; Varavin, V. S.; Dvoretskiı, S. A.; Liberman, V. T.; Mikhailov, N. N.; Sidorov, Yu. G. // Semiconductors;Jul97, Vol. 31 Issue 7, p655 

    Measurements of the charge carrier lifetime in epitaxial structures based on narrow-gap Hg[sub 1 - x]Cd[sub x]Te (x = 0.22), grown by molecular-beam epitaxy with pulsed excitation using radiation at different wavelengths, are reported. It is shown that in p-type epitaxial films the lifetime is...

  • Hg1-xMnxTe-CdTe superlattices grown by molecular beam epitaxy. Chu, X.; Sivananthan, S.; Faurie, J. P. // Applied Physics Letters;3/9/1987, Vol. 50 Issue 10, p597 

    Molecular beam epitaxial growth of Hg1-xMnxTe-CdTe superlattices is reported here for the first time. They have been characterized by electron and x-ray diffraction, infrared transmission, and Hall measurements. The presence of satellite peaks in the x-ray spectra shows that Hg1-xMnxTe-CdTe...

  • Growth and characterization of Hg1-xMnxTe grown by molecular beam epitaxy. Reno, J.; Sou, I. K.; Wijewarnasuriya, P. S.; Faurie, J. P. // Applied Physics Letters;12/1/1985, Vol. 47 Issue 11, p1168 

    Growth of Hg1-xMnxTe epilayers by molecular beam epitaxy is reported here for the first time. The layers were grown on both CdTe(111) and GaAs(100) substrates. Hall measurements and electron diffraction experiments confirm their high quality. Both n-type and p-type layers were grown. The layers...

  • Arsenic incorporation in HgCdTe grown by molecular beam epitaxy. Wijewarnasuriya, P. S.; Sivananthan, S. // Applied Physics Letters;4/6/1998, Vol. 72 Issue 14 

    We report the results of in situ arsenic doping in HgCdTe layers grown by molecular beam epitaxy (MBE). Arsenic incorporation was carried out by two mechanisms called conventional doping and planar doping. The obtained results indicate that for both mechanisms, after Hg anneal, arsenic was...

  • Molecular beam epitaxial growth and characterization of a novel superlattice system: Hg1-xCdxTe-CdTe. Reno, J.; Sou, I. K.; Wijewarnasuriya, P. S.; Faurie, J. P. // Applied Physics Letters;4/21/1986, Vol. 48 Issue 16, p1069 

    Hg1-xCdxTe-CdTe superlattices of both type I and type III have been grown for the first time using the molecular beam epitaxy technique. The superlattices were grown at 190 °C. They have been characterized by electron and x-ray diffraction, infrared transmission, and Hall measurements. The...

  • Use of cation-stabilized conditions to improve compatibility of CdTe and HgTe molecular beam epitaxy. Arias, José; Singh, Jasprit // Applied Physics Letters;10/9/1989, Vol. 55 Issue 15, p1561 

    Reflection high-energy electron diffraction (RHEED) dynamic studies are used to reveal the strong differences in growth kinetics of CdTe and HgTe grown by molecular beam epitaxy. These differences arise from the stronger CdTe bond compared to the HgTe bond. Surface migration activation barriers...

  • Modulated photoluminescence of shallow levels in arsenic-doped Hg1-xCdxTe (x≈0.3) grown by molecular beam epitaxy. Fangyu Yue; Junhao Chu; Jun Wu; Zhigao Hu; Yawei Li; Pingxiong Yang // Applied Physics Letters;3/24/2008, Vol. 92 Issue 12, p121916 

    Shallow levels in arsenic-doped Hg1-xCdxTe grown by molecular beam epitaxy have been investigated by temperature- and excitation power-dependent modulated photoluminescence spectroscopy. The ionization energies of the shallow levels of AsTe, AsHg, and the AsHg–VHg complex are...

  • Status of p-on- n Arsenic-Implanted HgCdTe Technologies. Mollard, L.; Destefanis, G.; Bourgeois, G.; Ferron, A.; Baier, N.; Gravrand, O.; Barnes, J.; Papon, A.; Milesi, F.; Kerlain, A.; Rubaldo, L. // Journal of Electronic Materials;Aug2011, Vol. 40 Issue 8, p1830 

    In this paper recent developments made by the French Atomic Energies and Alternative Energies Commission (CEA) at the Electronics and Information Technology Laboratory (LETI) on the fabrication of planar p-on- n HgCdTe photodiodes are reported. Results obtained on long-wavelength infrared (LWIR)...

  • Effect of Cycle Annealing Parameters on Dislocation Density Reduction for HgCdTe on Si. Farrell, S.; Rao, Mulpuri; Brill, G.; Chen, Y.; Wijewarnasuriya, P.; Dhar, N.; Benson, D.; Harris, K. // Journal of Electronic Materials;Aug2011, Vol. 40 Issue 8, p1727 

    In our previous study of ex situ thermal cycle annealing (TCA) of molecular beam epitaxy (MBE)-grown mercury cadmium telluride (HgCdTe) on CdTe/Si(211) composite substrates we showed consistent dislocation density reduction to ~1 × 10 cm. In this work, we have extended our study to...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics