TITLE

Observation of a two-dimensional hole gas in boron-doped Si0.5Ge0.5/Ge heterostructures

AUTHOR(S)
Wagner, G. R.; Janocko, M. A.
PUB. DATE
January 1989
SOURCE
Applied Physics Letters;1/2/1989, Vol. 54 Issue 1, p66
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The Hall mobility and magnetoresistance of Si0.5Ge0.5/Ge heterostructures grown by molecular beam epitaxy have been studied in the temperature range 1.5
ACCESSION #
9829426

 

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