Observation of a two-dimensional hole gas in boron-doped Si0.5Ge0.5/Ge heterostructures

Wagner, G. R.; Janocko, M. A.
January 1989
Applied Physics Letters;1/2/1989, Vol. 54 Issue 1, p66
Academic Journal
The Hall mobility and magnetoresistance of Si0.5Ge0.5/Ge heterostructures grown by molecular beam epitaxy have been studied in the temperature range 1.5


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